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EN25B64, EN25B64-100FIP, EN25B80

EN25B64, EN25B64-100FIP, EN25B80 Selling Leads, Datasheet

MFG:EON  Package Cooled:SOP  D/C:2009+

EN25B64, EN25B64-100FIP, EN25B80 Picture

EN25B64, EN25B64-100FIP, EN25B80 Datasheet download

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Part Number: EN25B64

 

MFG: EON

Package Cooled: SOP

D/C: 2009+

 

 

 
 
 
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About EN201D-05A

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Datasheet: EN201D-05A

File Size: 233496 KB

Manufacturer: FUJI [Fuji Electric]

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EN25B64-100FIP Suppliers

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About EN201D-05A

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Datasheet: EN201D-05A

File Size: 233496 KB

Manufacturer: FUJI [Fuji Electric]

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About EN25B80-75QC

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Datasheet: EN25B80-75QC

File Size: 463446 KB

Manufacturer: EON [Eon Silicon Solution Inc.]

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EN25B80 General Description

The EN25B80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25B80 has twenty sectors including fifteen sectors of 64KB, one sector of 32KB, one sector of 16KB, one sector of 8KB and two sectors of 4KB. This device is designed to allow either single Sector at a time or full chip erase operation.

The EN25B80 can protect boot code stored in the small sectors for either bottom or top boot configurations. The device can sustain a minimum of 100K program/erase cycles on each sector.

EN25B80 Maximum Ratings

Parameter Value Unit
Storage Temperature -65 to +125 °C
Plastic Packages -65 to +125 °C
Output Short Circuit Current1 200 mA
Input and Output Voltage (with respect to ground) 2 -0.5 to +4.0 V
Vcc -0.5 to +4.0 V

Notes:
1. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, inputs may undershoot Vss to 1.0V for periods of up to 50ns and to 2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V. During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure below.

EN25B80 Features

• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 8 M-bit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
• High performance
- 75MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 A typical power down current
• Flexible Sector Architecture:
- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one 32-Kbyte, and fifteen 64-Kbyte sectors
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Byte program time: 7µs typical
- Page program time: 1.5ms typical
- Sector erase time: 300 to 800ms typical
- Chip erase time: 10 Seconds typical
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- All Pb-free packages are RoHS compliant
• Commercial and industrial temperature Range

EN25B80 Connection Diagram

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