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The ESDA5V3SC6 is a monolithic voltage suppressor designed to protect components which are connected to data and transmission lines against ESD. It is available in SOT23-6L pacakge. It can be used in many occasions such as computers,printers,communication systems,GSM handsets and accessories and other telephone set.
There are some features as follows. (1) 4 unidirectional transil functions; (2) low leakage current; (3) 500 W peak pulse power; (4) suitable for high density boards.
What comes next is about the absolute maximum ratings. (1): ESD discharge (VPP) is 25 kV; (2): peak pulse power (Ppp) is 500 W; (3): junction temperature (Tj) is 150 ; (4): storage temperature (Tstg) is from -55 to 150 ; (5): lead solder temperature (TL) is 260 ; (6): operating temperature (Top) is from -40 to 125 . Then is about the electrical characters when Tamb is 25 . (1): breakdown voltage (VBR) is from 5.3 V to 5.9 V at IR is 1 mA; (2): the maximum leakage current (IRM) is 2 A at VRM is 3 V; (3): dynamic resistanceis 230 m; (4): the maximum forward voltage drop (VF) is 1.25 V at IF is 200 mA.
The ESDA6V1-4BC6 is a monolithic array designed to protect up to 4 lines in a bidirectional way against ESD transients. It is available in SOT23-6L package. It can be used in many occasions such as computers,printers,communication systems and video equipment.
There are some features as follows. (1) 4 unidirectional transil functions; (2) low leakage current; (3) high integration; (4) suitable for high density boards; (5) high ESD protection level; (6) ESD protection for data,signal and VCC bus.
What comes next is about the absolute maximum ratings. (1): ESD discharge (VPP) is 25 kV; (2): peak pulse power (Ppp) is 80 W; (3): junction temperature (Tj) is 150 ; (4): storage temperature (Tstg) is from -55 to 150 ; (5): lead solder temperature (TL) is 260 ; (6): operating temperature (Top) is from -40 to 125 . Then is about the electrical characters when Tamb is 25 . (1): breakdown voltage (VBR) is from 6.1 V to 8 V at IR is 1 mA; (2): the maximum leakage current (IRM) is 1 A at VRM is 3 V; (3): dynamic resistance (Rd) is 0.45 ; (4): the typical capacitance is 45 pF.