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FCH8P10Q, FCH8P15Q, FCI11N60

FCH8P10Q, FCH8P15Q, FCI11N60 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-220F  D/C:06+

FCH8P10Q, FCH8P15Q, FCI11N60 Picture

FCH8P10Q, FCH8P15Q, FCI11N60 Datasheet download

Five Points

Part Number: FCH8P10Q

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220F

D/C: 06+

Description: MOSFET N-CHAN 600V I2PAK

 

 
 
 
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FCH8P10Q Suppliers

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  • FCH10A10

  • Vendor: NIEC Pack: TO D/C: 07+& Qty: 9000 Note: New & original/stock  Adddate: 2024-04-23
  • Inquire Now
  • HK Yiding Electronics co,.ltd   China
    Contact: Mr.LISIMON   MSN:LFRZH888@HOTMAIL.COM
    Tel: 086-755-83467300
    Fax: 086-755-82518824
    (14)
  • FCH10A10

  • Vendor: NIEC Pack: TO D/C: 07+& Qty: 1900 Note: 100% new and original in stock  Adddate: 2024-04-23
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  • Kinergy Tech (HK)Co.,Ltd   Hong
    Contact: Ms.Lorina  
    Tel: 86-755-28538334
    Fax: --
    (25)
  • FCH10A15

  • Vendor: NIEC Pack: TO D/C: 04+& Qty: 3000  Adddate: 2024-04-23
  • Inquire Now
  • Aolun Electronic co ltd   Taiwan
    Contact: Ms.Ritaho   MSN:Ao.lun@hotmail.com
    Tel: 86-755-61358797
    Fax: 86-755-61327687
    (56)

About FCH05A10

PDF/DataSheet Download

Datasheet: FCH05A10

File Size: 67795 KB

Manufacturer: NIEC [Nihon Inter Electronics Corporation]

Download : Click here to Download

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FCH8P15Q Suppliers

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  • FCH10A10

  • Vendor: NIEC Pack: TO D/C: 07+& Qty: 9000 Note: New & original/stock  Adddate: 2024-04-23
  • Inquire Now
  • HK Yiding Electronics co,.ltd   China
    Contact: Mr.LISIMON   MSN:LFRZH888@HOTMAIL.COM
    Tel: 086-755-83467300
    Fax: 086-755-82518824
    (14)
  • FCH10A10

  • Vendor: NIEC Pack: TO D/C: 07+& Qty: 1900 Note: 100% new and original in stock  Adddate: 2024-04-23
  • Inquire Now
  • Kinergy Tech (HK)Co.,Ltd   Hong
    Contact: Ms.Lorina  
    Tel: 86-755-28538334
    Fax: --
    (25)
  • FCH10A15

  • Vendor: NIEC Pack: TO D/C: 04+& Qty: 3000  Adddate: 2024-04-23
  • Inquire Now
  • Aolun Electronic co ltd   Taiwan
    Contact: Ms.Ritaho   MSN:Ao.lun@hotmail.com
    Tel: 86-755-61358797
    Fax: 86-755-61327687
    (56)

About FCH05A10

PDF/DataSheet Download

Datasheet: FCH05A10

File Size: 67795 KB

Manufacturer: NIEC [Nihon Inter Electronics Corporation]

Download : Click here to Download

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FCI11N60 Suppliers

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About FCI11N60

PDF/DataSheet Download

Datasheet: FCI11N60

File Size: 595115 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FCI11N60 Parameters

Technical/Catalog InformationFCI11N60
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs380 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 1490pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs52nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FCI11N60
FCI11N60

FCI11N60 General Description

SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

FCI11N60 Maximum Ratings

Symbol
Parameter
FCI11N60
Unit
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL

Drain-Source Voltage
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds

(Note 1)


(Note 2)
(Note 1)
(Note 1)
(Note 3)


600
11
7
33
± 30
340
11
12.5
4.5
125
1.0
-55 to +150
300
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C

FCI11N60 Features

• 650V @TJ = 150°C
• Typ. RDS(on) = 0.32Ω
• Ultra Low Gate Charge (typ. Qg = 40nC)
• Low Effective Output Capacitance (typ. Cosseff. = 95pF)
• 100% Avalanche Tested

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