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MFG:TO-262(I2PAK)  Package Cooled:7850  D/C:FAIRCHILD  

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Part Number: FCI7N60

 

MFG: TO-262(I2PAK)

Package Cooled: 7850

D/C: FAIRCHILD

Description: SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an ad...


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FCI7N60 General Description


SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

FCI7N60 Maximum Ratings

Symbol
Parameter
FCI11N60
Unit
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL

Drain-Source Voltage
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds

 (Note 1)


(Note 2)
(Note 1)
(Note 1)
(Note 3)
600
7
4.4
21
± 30
230
7
8.3
4.5
83
0.67
-55 to +150
300
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C

FCI7N60 Features

• 650V @TJ = 150°C
• Typ. RDS(on) = 0.53Ω
• Ultra Low Gate Charge (typ. Qg = 25nC)
• Low Effective Output Capacitance (typ. Cosseff. = 60pF)
• 100% Avalanche Tested

FCI7N60 datasheet

FCI7N60
PDF/DataSheet Download

  • Datasheet: FCI7N60
  • File Size: 974702 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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  • ·FCI11N60
  • FAIRCHILD [Fairchild Semiconductor] 
  • 600V N-Channel MOSFET 
  • 595115 KB
  • FCI11N60 Datasheet Download

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