FCI7N60

MOSFET HIGH_POWER

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FCI7N60 Picture
SeekIC No. : 00153642 Detail

FCI7N60: MOSFET HIGH_POWER

floor Price/Ceiling Price

US $ .91~1.41 / Piece | Get Latest Price
Part Number:
FCI7N60
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.41
  • $1.14
  • $1.03
  • $.91
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 0.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 7 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.6 Ohms


Features:

• 650V @TJ = 150°C
• Typ. RDS(on) = 0.53Ω
• Ultra Low Gate Charge (typ. Qg = 25nC)
• Low Effective Output Capacitance (typ. Cosseff. = 60pF)
• 100% Avalanche Tested



Specifications

Symbol
Parameter
FCI11N60
Unit
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL

Drain-Source Voltage
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds

(Note 1)


(Note 2)
(Note 1)
(Note 1)
(Note 3)


600
7
4.4
21
± 30
230
7
8.3
4.5
83
0.67
-55 to +150
300
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C



Description

FCI7N60 SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This FCI7N60 advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.


Parameters:

Technical/Catalog InformationFCI7N60
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs600 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds 920pF @ 25V
Power - Max83W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FCI7N60
FCI7N60



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