MOSFET HIGH_POWER
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 7 A | ||
Resistance Drain-Source RDS (on) : | 0.6 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Symbol |
Parameter |
FCI11N60 |
Unit | ||
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL |
Drain-Source Voltage |
(Note 1) (Note 2) (Note 1) (Note 1) (Note 3) |
600 7 4.4 21 ± 30 230 7 8.3 4.5 83 0.67 -55 to +150 300 |
V A A A V mJ A mJ V/ns W W/°C °C °C |
Technical/Catalog Information | FCI7N60 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 7A |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 3.5A, 10V |
Input Capacitance (Ciss) @ Vds | 920pF @ 25V |
Power - Max | 83W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 30nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FCI7N60 FCI7N60 |