MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
FDB15N50, FDB16AN08A0, FDB16AN08AO Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 75V 58A TO-263AB
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PDF/DataSheet Download
Datasheet: FDB15N50
File Size: 199627 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDB16AN08A0
File Size: 273944 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDB035AN06A0
File Size: 242063 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDB15N50 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 7.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1850pF @ 25V |
| Power - Max | 300W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 41nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDB15N50 FDB15N50 FDB15N50TR ND FDB15N50TRND FDB15N50TR |
| Symbol | Parameter | Ratings | Units |
| VDSS |
Drain to Source Voltage |
500 |
V |
| VGS |
Gate to Source Voltage | ±30 | V |
| ID |
Drain Current Continuous (TC = 25, VGS = 10V) Continuous (TC = 100, VGS = 10V) Pulsed1 |
15 | A |
| 11 |
A | ||
| 60 | |||
| PD |
Power dissipation Derate above 25 |
300 2 |
W W/ |
| TJ , TSTG |
Operating and Storage Temperature | -55 to 175 | |
| Soldering Temperature for 10 seconds | 300 (1.6mm from case) |
| Technical/Catalog Information | FDB16AN08A0 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 58A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 58A, 10V |
| Input Capacitance (Ciss) @ Vds | 1857pF @ 25V |
| Power - Max | 135W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 42nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDB16AN08A0 FDB16AN08A0 |
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain to Source Voltage | 75 | V |
| VGS | Gate to Source Voltage | ±20 | V |
| ID | Drain Current Continuous (TC = 25, VGS = 10V) |
58 | A |
| Continuous (TC = 100, VGS = 10V) | 44 | ||
| Continuous (Tamb = 25, VGS= 10V, with RJA = 43/W) | 9 | A | |
| Pulsed | Figure 4 | A | |
| EAS | Single Pulse Avalanche Energy (Note 1) | 117 | mJ |
| PD | Power dissipation | 135 | W |
| Derate above 25 | 0.9 | W/ | |
| TJ , TSTG | Operating and Storage Temperature | -55 to 175 |
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