FDB029N06

MOSFET NCH 60V 2.9Mohm

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SeekIC No. : 00147822 Detail

FDB029N06: MOSFET NCH 60V 2.9Mohm

floor Price/Ceiling Price

US $ 1.98~2.68 / Piece | Get Latest Price
Part Number:
FDB029N06
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.68
  • $2.41
  • $2.2
  • $1.98
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 193 A Resistance Drain-Source RDS (on) : 2.4 m Ohms at 10 V
Configuration : Single Maximum Operating Temperature : + 175 C
Packaging : Reel    

Description

Gate-Source Breakdown Voltage :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Packaging : Reel
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 193 A
Resistance Drain-Source RDS (on) : 2.4 m Ohms at 10 V


Pinout

  Connection Diagram


Description

The FDB029N06 is N-Channel PowerTrench MOSFET. It is  produced using Fairchild Semiconductor's advanced PowerTrench  process that has been especially tailored to minimize  the on-state resistance and yet maintain superior switching performance. The application of it is DC to DC Converters / Synchronous Rectification.

The features of FDB029N06 can be summarized as:(1)RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A; (2)Fast Switching Speed; (3)Low Gate Charge; (4)High Performance  Trench Technology for Extremely Low RDS(on) ; (5)High Power and Current Handling Capability; (6)RoHS Compliant.

The absolute maximum ratings of FDB029N06 are:(1)Drain to Source Voltage:60 V; (2)Gate to Source Voltage:±20 V; (3)Drain Current:Continuous (TC = 25°C,silicon limited)..193A, continuous(TC=25°C, package limited)..120A, Continuous (TC = 100°C, silicon limited)..136A, Pulsed..772 A; (4)Single Pulsed Avalanche Energy:1434 mJ; (5)Peak Diode Recovery dv/dt:6.0 V/ns; (6)Power Dissipation(TC = 25°C):231 W,Derate above 25°C..1.54W/°C; (7)Operating and Storage Temperature Range:-55°C to +175°C; (8)Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds:300°C.

The electrical characteristics of the FDB029N06 are:(1)drain to source breakdown voltage:60V;(2)gate to source leakage current:±100nA;(3)gate to source threshold voltage:2.5V to 4.5V;(4)input capacitance:7380pF to 9815pF;(5)output capacitance:1095pF to 1455pF;(6)turn-on delay time:39ns to 87ns;(7)turn-off delay time:54ns to 118ns;(8)rise time:178ns to 366ns;(9)fall time:33ns to 76ns.

If you want to know more information such as the electrical characteristics about the FDB029N06, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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