MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:.
FDB33N10, FDB33N25, FDB33N25TM Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: TO-263
D/C: .
Description: MOSFET N-CH 250V 33A D2PAK
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PDF/DataSheet Download
Datasheet: FDB035AN06A0
File Size: 242063 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDB33N25
File Size: 705212 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDB33N25TM
File Size: 705212 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
|
Symbol |
Parameter |
FDB33N25 |
Units |
|
VDSS |
Drain-Source Voltage |
250 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
33
20.4 |
A |
|
A | |||
|
IDM |
Drain Current - Pulsed (Note 1) |
132 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
918 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
33 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
23.5 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
235
1.89 |
W
W/°C |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
| Technical/Catalog Information | FDB33N25TM |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 33A |
| Rds On (Max) @ Id, Vgs | 94 mOhm @ 16.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2135pF @ 25V |
| Power - Max | 235W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 48nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDB33N25TM FDB33N25TM FDB33N25TMCT ND FDB33N25TMCTND FDB33N25TMCT |
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