MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
FDB3632, FDB3652, FDB3672 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 100V 44A D2PAK
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PDF/DataSheet Download
Datasheet: FDB3632
File Size: 317811 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDB3652
File Size: 278792 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDB3672
File Size: 277493 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDB3632 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 6000pF @ 25V |
| Power - Max | 310W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDB3632 FDB3632 FDB3632CT ND FDB3632CTND FDB3632CT |
| Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
|---|---|---|---|---|---|---|---|---|
| FDB3632 | Full Production | RoHS Compliant | $3.64 | TO-263(D2PAK) | 2 | TAPE REEL | TS2A | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FDB3632 |
| * Fairchild 1,000 piece Budgetary Pricing |
| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FDB3632 is available. Click here for more information . |
| Technical/Catalog Information | FDB3652 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 61A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 61A, 10V |
| Input Capacitance (Ciss) @ Vds | 2880pF @ 25V |
| Power - Max | 150W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 53nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDB3652 FDB3652 FDB3652TR ND FDB3652TRND FDB3652TR |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current
Continuous (TC = 25, VGS = 10V) |
61 |
A |
|
Continuous (TC = 100, VGS = 10V) |
43 |
A | |
|
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W) |
9 |
A | |
|
Pulsed |
Figure 4 |
A | |
|
EAS |
Single Pulse Avalanche Energy (Note 1) |
182 |
mJ |
|
PD |
Power dissipation |
150 |
W |
|
Derate above 25 |
1.0 |
W/°C | |
|
TJ, Tstg |
Operating and Storage Temperature |
-55 to 175 |
°C |
| Technical/Catalog Information | FDB3672 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 44A |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 44A, 10V |
| Input Capacitance (Ciss) @ Vds | 1710pF @ 25V |
| Power - Max | 120W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 31nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDB3672 FDB3672 |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current
Continuous (TC = 25, VGS = 10V) |
44 |
A |
|
Continuous (TC = 100, VGS = 10V) |
31 |
A | |
|
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W) |
7.2 |
A | |
|
Pulsed |
Figure 4 |
A | |
|
EAS |
Single Pulse Avalanche Energy (Note 1) |
120 |
mJ |
|
PD |
Power dissipation |
120 |
W |
|
Derate above 25 |
0.8 |
W/°C | |
|
TJ, Tstg |
Operating and Storage Temperature |
-55 to 175 |
°C |
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