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FDB3682, FDB4020P, FDB4030L

Table of contents:
Info of FDB3682
Info of FDB4020P
Info of FDB4030L

FDB3682, FDB4020P, FDB4030L Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FDB3682, FDB4020P, FDB4030L Datasheet download

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Part Number: FDB3682

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET P-CH 20V 16A TO-263AB

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FDB3682 Parameters

Technical/Catalog Information	FDB3682
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	36 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds	1250pF @ 25V
Power - Max	95W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	28nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB3682 FDB3682

FDB3682 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	100	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (T_C = 25, V_GS = 10V)	32	A
	Continuous (T_C = 100, V_GS = 10V)	23	A
	Continuous (T_amb = 25, V_GS = 10V, R_JA = 43/W)	6	A
	Pulsed	Figure 4	A
E_AS	Single Pulse Avalanche Energy (Note 1)	55	mJ
P_D	Power dissipation	95	W
P_D	Derate above 25	0.63	W/°C
T_J, T_stg	Operating and Storage Temperature	-55 to 175	°C

FDB3682 Features

• r _DS(ON) = 32mΩ (Typ.), V_GS = 10V, I_D = 32A
• Q _g(tot) = 18.5nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101

FDB3682 Typical Application

• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System

FDB4020P Parameters

Technical/Catalog Information	FDB4020P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	80 mOhm @ 8A, 4.5V
Input Capacitance (Ciss) @ Vds	665pF @ 10V
Power - Max	37.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	13nC @ 4.5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB4020P FDB4020P

FDB4020P General Description

This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel.

FDB4020P Maximum Ratings

Symbol	Parameter	FDP4020P	FDB4020P	Units
V_DSS	Drain-Source Voltage	-20		V
V_GSS	Gate-Source Voltage	±8		V
I_D	Drain Current - Continuous - Pulsed	-16		A
		-48
P_D	Total Power Dissipation @ T_C= 25	37.5		W
	Derate above 25	0.25		W/
T_J, T_STG	Operating and Storage Junction Temperature Range	-65 to +175

FDB4020P Features

* -16 A, -20 V. R_DS(on) = 0.08 @ V_GS= -4.5 V
R_DS(on) = 0.11 @ V_GS = -2.5 V.
* Critical DC electrical parameters specified at elevated temperature.
* High density cell design for extremely low R_DS(on)
* TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.
* 175°C maximum junction temperature rating.

FDB4030L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FDB4030L Maximum Ratings

Symbol	Parameter	FDP4030L	FDB4030L	Units
V_DSS	Drain-Source Voltage	80		V
V_GSS	Gate-Source Voltage	± 20		V
I_D	Drain Current - Continuous (Note 1) - Pulsed (Note 1)	3.0		A
		60
P_D	Total Power Dissipation @ TC = 25°C Derate above 25°C	37.5		W
		0.25		W/°C
T_J, T_stg	Operating and Storage Temperature Range	-65 to 175		°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275		°C

FDB4030L Features

20 A, 30 V. R _DS(ON)= 0.035 W @ V_GS=10 V
R _DS(ON)= 0.055 W @ V_GS=4.5V
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High density cell design for extremely low R _DS(ON)
175°C maximum junction temperature rating.

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