MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:06+
FDB42AN, FDB42AN15A0, FDB42AN15AO Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-263
D/C: 06+
Description: MOSFET N-CH 150V 35A TO-263AB
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PDF/DataSheet Download
Datasheet: FDB42AN15A0
File Size: 264427 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDB42AN15A0
File Size: 264427 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDB035AN06A0
File Size: 242063 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDB42AN15A0 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 2150pF @ 25V |
| Power - Max | 150W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDB42AN15A0 FDB42AN15A0 |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
150 |
V |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current
Continuous (TC = 25, VGS = 10V) |
35 |
A |
|
Continuous (TC = 100, VGS = 10V) |
24 |
| |
|
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W) |
5 |
A | |
|
Pulsed |
Figure 4 |
A | |
|
EAS |
Single Pulse Avalanche Energy (Note 1) |
90 |
mJ |
|
PD |
Power dissipation |
150 |
W |
|
Derate above 25 |
1.00 |
W/°C | |
|
TJ, Tstg |
Operating and Storage Temperature |
-55 to 175 |
°C |
•rDS(ON) = 36mΩ (Typ.), VGS = 10V, ID = 12A
•Q g(tot) = 33nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
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