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FDB44N25, FDB44N25TM, FDB52N20

Table of contents:
Info of FDB44N25
Info of FDB44N25TM
Info of FDB52N20

FDB44N25, FDB44N25TM, FDB52N20 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:TO-263(D2PAK) D/C:06+

FDB44N25, FDB44N25TM, FDB52N20 Datasheet download

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Part Number: FDB44N25TM

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: TO-263(D2PAK)

D/C: 06+

Description: MOSFET N-CH 250V 44A D2PAK

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FDB44N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

FDB44N25 Maximum Ratings

Symbol	Parameter	FDB44N25	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	44	A
I_D		26.4	A
I_DM	Drain Current - Pulsed (Note 1)	176	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	2055	mJ
I_AR	Avalanche Current (Note 1)	44	A
E_AR	Repetitive Avalanche Energy (Note 1)	30.7	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	307 2.45	W W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FDB44N25 Features

• 44A, 250V, R_DS(on) = 0.069Ω @V_GS = 10 V
• Low gate charge ( typical 47 nC)
• Low C_rss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FDB44N25TM Parameters

Technical/Catalog Information	FDB44N25TM
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	44A
Rds On (Max) @ Id, Vgs	69 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds	2870pF @ 25V
Power - Max	307W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	61nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB44N25TM FDB44N25TM FDB44N25TMDKR ND FDB44N25TMDKRND FDB44N25TMDKR

FDB52N20 General Description

These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factor correction.

FDB52N20 Maximum Ratings

Symbol	Parameter	FDH50N50/FDA50N50	Unit
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	52 33	A A
I_DM	Drain Current - Pulsed (Note 1)	208	A
V_GSS	Gate-Source voltage	30 ±	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	2520	mJ
I_AR	Avalanche Current (Note 1)	52	A
E_AR	Repetitive Avalanche Energy (Note 1)	35.7	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	357 2.86	W W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds	300

FDB52N20 Features

* 52A, 200V, R_DS(on) = 0.049 @V_GS = 10 V
* Low gate charge ( typical 49 nC)
* Low C_rss ( typical 66 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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