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FDB5690, FDB5800, FDB5N15

Table of contents:
Info of FDB5690
Info of FDB5800
Info of FDB5N15

FDB5690, FDB5800, FDB5N15 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:TO

FDB5690, FDB5800, FDB5N15 Datasheet download

Five Points

Part Number: FDB5690

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: TO

Description: MOSFET N-CH LL 60V 80A TO-263AB

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FDB5690 Parameters

Technical/Catalog Information	FDB5690
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	27 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	1120pF @ 25V
Power - Max	58W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	33nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB5690 FDB5690 FDB5690DKR ND FDB5690DKRND FDB5690DKR

FDB5690 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.

FDB5690 Maximum Ratings

Symbol	Parameter	FDP5690	FDB5690	Units
V_DSS	Drain-Source Voltage	80		V
V_GSS	Gate-Source Voltage	± 20		V
I_D	Drain Current - Continuous - Pulsed	32		A
		100
P_D	Total Power Dissipation @ TC = 25	58		W
	Derate above 25	0.4		W/°C
T_J, T_stg	Operating and Storage Temperature Range	-65 to +175		°C

FDB5690 Features

• 32 A, 60 V.  R _DS(ON)= 0.027 Ω @ VGS = 10 V
                      R _DS(ON)= 0.032 Ω @ VGS = 6 V
• Critical DC electrical parameters specified at evevated temperature.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low  R _DS(ON)• 175°C maximum junction temperature rating.

FDB5800 Parameters

Technical/Catalog Information	FDB5800
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	6 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	6625pF @ 15V
Power - Max	242W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	135nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB5800 FDB5800 FDB5800TR ND FDB5800TRND FDB5800TR

FDB5800 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	60	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current Continuous (T_C < 102, V_GS = 10V)	80	A
	Continuous (T_C< 90, V_GS = 5V)	80	A
	Continuous (T_amb = 25, V_GS = 10V, with R_JA= 43/W)	14	A
	Pulsed	Figure 4	A
E_AS	Single Pulse Avalanche Energy (Note 1)	652	mJ
P_D	Power dissipation	242	W
P_D	Derate above 25	1.61	W/
T_J , T_STG	Operating and Storage Temperature	-55 to 175

FDB5800 Features

*r_DS(ON) = 5.5m? (Typ.), V_GS = 5V, I_D = 80A
*High performance trench technology for extermely low Rdson
*Low Gate Charge
*High power and current handling capability
*Qualified to AEC Q101
*RoHS Compliant

FDB5800 Typical Application

Motor/ Body Load Control
ABS Systems
Power Train Management
Injection Systems
DC-DC Converters and Off-Line UPS

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