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FDB6021P, FDB6030, FDB6030BL

Table of contents:
Info of FDB6021P
Info of FDB6030
Info of FDB6030BL

FDB6021P, FDB6030, FDB6030BL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FDB6021P, FDB6030, FDB6030BL Datasheet download

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Part Number: FDB6021P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CH 30V 40A TO-263AB

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FDB6021P Parameters

Technical/Catalog Information	FDB6021P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	28A
Rds On (Max) @ Id, Vgs	30 mOhm @ 14A, 4.5V
Input Capacitance (Ciss) @ Vds	1890pF @ 10V
Power - Max	37W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	28nC @ 4.5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB6021P FDB6021P

FDB6021P General Description

This P-Channel power MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for power management applications.

FDB6021P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	± 8	V
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	28	A
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	80	A
P_D	Total Power Dissipation @ T_C= 25 Derate above 25	37	W
P_D	Total Power Dissipation @ T_C= 25 Derate above 25	0.25	W°C
T_J, T_STG	Operating and Storage Junction Temperature Range	65 to +175	°C

FDB6021P Features

* 28 A, 20 V. R_DS(ON) = 30 m @ V_GS = 4.5 V
R_DS(ON) = 40 m @ V_GS = 2.5 V
R_DS(ON) = 65 m @ V_GS = 1.8 V
* Critical DC electrical parameters specified at elevated temperature
* High performance trench technology for extremely low RDS(ON)
* 175°C maximum junction temperature rating

FDB6021P Typical Application

* Battery management
* Load switch
* Voltage regulator

FDB6030BL Parameters

Technical/Catalog Information	FDB6030BL
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	18 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	1160pF @ 15V
Power - Max	60W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB6030BL FDB6030BL

FDB6030BL General Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R_DS(on)specifications resulting in DC/DC power supply designs with higher overall efficiency.

FDB6030BL Maximum Ratings

Symbol	Parameter	FDP6030BL	FDB6030BL	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage	±20		V
I_D	Maximum Drain Current - Continuous (Note 1) - Pulsed	40		A
		120
P_D	Total Power Dissipation @ T_C = 25	60		W
	Derate above 25	0.36		W/
T_J, T_STG	Operating and Storage Junction Temperature Range	-65 to +175

FDB6030BL Features

* 40 A, 30 V. R_DS(ON) = 0.018 @ V_GS = 10 V
R_DS(ON) = 0.024 @ V_GS = 4.5 V.
* Critical DC electrical parameters specified at elevated temperature.
* Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
* High performance trench technology for extremely low R_DS(ON).
* 175 maximum junction temperature rating.

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