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These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
FDB6030L Maximum Ratings
Symbol
Parameter
FDP4020P
FDB4020P
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Drain Current - Continuous - Pulsed
52
A
156
PD
Maximum Power Dissipation @ Tc = 25 Derate above 25
75
W
0.5
W/
TJ, TSTG
Operating and Storage Temperature Range
-65 to 175
FDB6030L Features
*52 A, 30 V. RDS(ON) = 0.0135 @ VGS =10 V RDS(ON) = 0.020 @ VGS =4.5 V. *Improved replacement for NDP6030L/NDB6030L. *Low gate charge (typical 34 nC). *Low Crss (typical 175 pF). *Fast switching speed.