FDB6035AL, FDB6035L, FDB603AC Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:00/01
FDB6035AL, FDB6035L, FDB603AC Datasheet download
Part Number: FDB6035AL
MFG: FAIRC
Package Cooled: .
D/C: 00/01
FDB6035AL, FDB6035L, FDB603AC
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Info of FDB6035AL
Info of FDB6035L
Info of FDB603AC
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About FDB6035AL
PDF/DataSheet Download
Datasheet: FDB6035AL
File Size: 95328 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About FDB6035L
PDF/DataSheet Download
Datasheet: FDB6035L
File Size: 423412 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FDB035AN06A0
PDF/DataSheet Download
Datasheet: FDB035AN06A0
File Size: 242063 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FDB6035AL General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FDB6035AL Maximum Ratings
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current Continuous (Note 1) Pulsed (Note 1) |
48 |
A |
| 180 | |||
| PD | Total Power Dissipation @ TC = 25 Derate above 25 |
52 | W |
0.3 |
W/ | ||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -65 to +175 |
FDB6035AL Features
*48 A, 30 V RDS(ON) = 12 m @ VGS = 10 V
RDS(ON) = 14 m @ VGS = 4.5 V
*Critical DC electrical parameters specified at elevated temperature
*High performance trench technology for extremely ow RDS(ON)
*175 maximum junction temperature rating
RDS(ON) = 14 m @ VGS = 4.5 V
*Critical DC electrical parameters specified at elevated temperature
*High performance trench technology for extremely ow RDS(ON)
*175 maximum junction temperature rating
FDB6035L General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
FDB6035L Maximum Ratings
| Symbol | Parameter | FDP6035L | FDB6035L | Units |
| VDSS | Drain-Source Voltage | 30 | V | |
| VGSS | Gate-Source Voltage | ±20 | V | |
| ID | Drain Current - Continuous - Pulsed |
58 | A | |
| 175 | ||||
| PD | Maximum Power Dissipation @ TC = 25 Derate above 25 |
75 | W | |
| 0.5 | W/ | |||
| TJ, TSTG | Operating and Storage Temperature Range | -65 to 175 | ||
FDB6035L Features
*58 A, 30 V. RDS(ON) = 0.011 @ VGS =10 V
RDS(ON) = 0.019 @ VGS =4.5 V.
*Low gate charge (typical 34 nC).
*Low Crss (typical 175 pF).
*Fast switching speed.
RDS(ON) = 0.019 @ VGS =4.5 V.
*Low gate charge (typical 34 nC).
*Low Crss (typical 175 pF).
*Fast switching speed.
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