FDB6644, FDB6644S, FDB6670 Selling Leads, Datasheet
Package Cooled:TO-263 D/C:09+
FDB6644, FDB6644S, FDB6670 Datasheet download
Part Number: FDB6644
MFG: --
Package Cooled: TO-263
D/C: 09+
FDB6644, FDB6644S, FDB6670
- Table of contents:
Info of FDB6644
Info of FDB6644S
Info of FDB6670
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About FDB6644
PDF/DataSheet Download
Datasheet: FDB6644
File Size: 82394 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FDB035AN06A0
PDF/DataSheet Download
Datasheet: FDB035AN06A0
File Size: 242063 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FDB6670AL
PDF/DataSheet Download
Datasheet: FDB6670AL
File Size: 159951 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FDB6644 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDB6644 Maximum Ratings
|
Symbol |
Parameter |
FDP6644 |
FDB6644 |
Units |
|
VDSS |
Drain-Source Voltage |
30 |
V | |
|
VGSS |
Gate-Source Voltage |
± 16 |
V | |
|
ID |
Drain Current - Continuous (Note 1)
- Pulsed (Note 1) |
50 |
A | |
|
150 | ||||
|
PD |
Total Power Dissipation @ TC=25
Derate above 25 |
125 |
W | |
|
83 |
W/ | |||
|
TJ, Tstg |
Operating and Storage Temperature Range |
-65 to +175 |
||
FDB6644 Features
· 50 A, 30 V. R DS(ON)= 8.5 mW @ VGS = 10 V
R DS(ON)=10.5 mW @ VGS = 4.5 V
· Low gate charge (27 nC typical)
· Fast switching speed
· High performance trench technology for extremely low R DS(ON)
· 175°C maximum junction temperature rating
R DS(ON)=10.5 mW @ VGS = 4.5 V
· Low gate charge (27 nC typical)
· Fast switching speed
· High performance trench technology for extremely low R DS(ON)
· 175°C maximum junction temperature rating
FDB6644S General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R DS(ON) and low gate charge. The FDP6644S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP6644S/FDB6644S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6644/FDB6644 in parallel with a Schottky diode.
FDB6644S Maximum Ratings
|
Symbol |
Parameter |
Ratings |
Unit |
|
VDSS |
Drain-Source Voltage |
30 |
V |
|
VGSS |
Gate-Source Voltage |
±16 |
V |
|
ID |
Drain Current - Continuous (Note 1) |
55 |
A |
|
150 | |||
|
PD |
Power Dissipation (TC = 25) |
60 |
W |
|
0.48 |
W/ | ||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65to+125 |
|
|
TL |
Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds |
275 |
|
FDB6644S Features
* 28 A, 30 V. R DS(ON) = 10 m W @ VGS = 10 V
R DS(ON) = 12 m W @ VGS = 4.5 V
* Includes SyncFET Schottky body diode
* Low gate charge (27nC typical)
* High performance trench technology for extremely low R DS(ON) and fast switching
* High power and current handling capability
R DS(ON) = 12 m W @ VGS = 4.5 V
* Includes SyncFET Schottky body diode
* Low gate charge (27nC typical)
* High performance trench technology for extremely low R DS(ON) and fast switching
* High power and current handling capability
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