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FDB6670AL, FDB6670AS, FDB6670AS_NL

Table of contents:
Info of FDB6670AL
Info of FDB6670AS
Info of FDB6670AS_NL

FDB6670AL, FDB6670AS, FDB6670AS_NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:1000

FDB6670AL, FDB6670AS, FDB6670AS_NL Picture

FDB6670AL, FDB6670AS, FDB6670AS_NL Datasheet download

Five Points

Part Number: FDB6670AL

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-252

D/C: 1000

Description: MOSFET N-CH 30V 62A TO-263AB

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FDB6670AL Parameters

Technical/Catalog Information	FDB6670AL
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	2440pF @ 15V
Power - Max	68W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	33nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB6670AL FDB6670AL

FDB6670AL General Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R_DS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FDB6670AL Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	80	A
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	240	A
P_D	Total Power Dissipation @ T_C = 25 Derate above 25	68	W
P_D	Total Power Dissipation @ T_C = 25 Derate above 25	0.45	W/
T_J, T_STG	Operating and Storage Junction Temperature Range	65 to +175

FDB6670AL Features

*80 A, 30 V R_DS(ON) = 6.5 m @ V_GS = 10 V
R_DS(ON) = 8.5 m @ V_GS = 4.5 V
*Critical DC electrical parameters specified at elevated temperature
*High performance trench technology for extremely low R_DS(ON)*175 maximum junction temperature rating

FDB6670AS Parameters

Technical/Catalog Information	FDB6670AS
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	62A
Rds On (Max) @ Id, Vgs	8.5 mOhm @ 31A, 10V
Input Capacitance (Ciss) @ Vds	1570pF @ 15V
Power - Max	62.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	39nC @ 15V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB6670AS FDB6670AS

FDB6670AS General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.

FDB6670AS Maximum Ratings

Symbol	Parameter	FDP6670AS	FDB6670AS	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage	± 20		V
I_D	Drain Current - Continuous - Pulsed	62		A
		150
P_D	Total Power Dissipation @ T_C=25 Derate above 25	62.5		W
		0.5		W/
T_J, T_stg	Operating and Storage Temperature Range	55 to +150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

FDB6670AS Features

• 31 A, 30 V. R _DS(ON)= 8.5 mΩ @ V_GS = 10 V
R _DS(ON)= 10.5 mΩ@ V_GS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (28nC typical)
• High performance trench technology for extremely low R _DS(ON)= and fast switching
• High power and current handling capability

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