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FDB6670S, FDB6676, FDB6676S

Table of contents:
Info of FDB6670S
Info of FDB6676
Info of FDB6676S

FDB6670S, FDB6676, FDB6676S Selling Leads, Datasheet

Package Cooled:TO-263 D/C:09+

FDB6670S, FDB6676, FDB6676S Datasheet download

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Part Number: FDB6670S

MFG: --

Package Cooled: TO-263

D/C: 09+

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FDB6670S General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP6670S/FDB6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.

FDB6670S Maximum Ratings

Symbol	Parameter	FDP5645	FDB5645	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage	± 20		V
I_D	Drain Current - Continuous (Note 1) - Pulsed (Note 1)	62		A
		150
P_D	Total Power Dissipation @ T_C =25 Derate above 25	62.5		W
		0.5		W/
T_J, T_stg	Operating and Storage Temperature Range	55 to +150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

FDB6670S Features

· 31 A, 30 V.   R _DS(ON)= 8.5 mW @ V_GS = 10 V
                         R _DS(ON)=12.5 mW @ V_GS = 4.5 V
· Includes SyncFET Schottky body diode
· Low gate charge (23nC typical)
· High performance trench technology for extremely low RDS(ON) and fast switching
· High power and current handling capability

FDB6676 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) .

FDB6676 Maximum Ratings

Symbol	Parameter	FDP5645	FDB5645	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage	± 16		V
I_D	Drain Current - Continuous (Note 1) - Pulsed (Note 1)	84		A
		240
P_D	Total Power Dissipation @ T_C=25 Derate above 25	93		W
		0.48		W/
T_J, T_stg	Operating and Storage Temperature Range	-65 to +175

FDB6676 Features

• 42 A, 30 V. R _DS(ON)= 6.0 mΩ @ V_GS = 10 V
R _DS(ON)= 7.5 mΩ @ V_GS = 4.5 V
• Critical DC electrical parameters specified at elevated temperature
• High performance trench technology for extremely low R _DS(ON)
• 175°C maximum junction temperature rating

FDB6676 Typical Application

• Synchronous rectifier
• DC/DC converter

FDB6676S General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP/B6676S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP/B6676S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP/B6676 in parallel with a Schottky diode.

FDB6676S Maximum Ratings

Symbol	Parameter	FDP6676S	FDB6676S	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage	±16		V
I_D	Drain Current - Continuous - Pulsed	76		A
		150
P_D	Total Power Dissipation @ T_C=25 Derate above 25	70		W
		0.56		W/
T_J, T_stg	Operating and Storage Temperature Range	55 to +150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

FDB6676S Features

• 38 A, 30 V. R _DS(ON) = 6.5 mΩ @ V_GS = 10 V
R _DS(ON) =8.0 mΩ @ V_GS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (40nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability

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