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FDB6690S, FDB66N15, FDB66N15TM

Table of contents:
Info of FDB6690S
Info of FDB66N15
Info of FDB66N15TM

FDB6690S, FDB66N15, FDB66N15TM Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:TO

FDB6690S, FDB66N15, FDB66N15TM Datasheet download

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Part Number: FDB6690S

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: TO

Description: MOSFET N-CH 30V 42A TO-263AB

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FDB6690S Parameters

Technical/Catalog Information	FDB6690S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	42A
Rds On (Max) @ Id, Vgs	15.5 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds	1238pF @ 15V
Power - Max	48W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB6690S FDB6690S

FDB6690S General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode.

FDB6690S Maximum Ratings

Symbol	Parameter	FDP6690S	FDB6690S	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage	± 20		V
I_D	Drain Current - Continuous - Pulsed	42		A
		140
P_D	Total Power Dissipation @ T_C=25 Derate above 25	48		W
		0.5		W/
T_J, T_stg	Operating and Storage Temperature Range	55 to +150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

FDB6690S Features

· 21 A, 30 V. R _DS(ON)= 15.5 mW @ V_GS = 10 V
R _DS(ON)= 23.0 mW @ V_GS = 4.5 V
· Includes SyncFET Schottky body diode
· Low gate charge (11nC typical)
· High performance trench technology for extremely low R _DS(ON) and fast switching
· High power and current handling capability

FDB66N15 General Description

These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factor correction.

FDB66N15 Maximum Ratings

Symbol	Parameter	FDH50N50/FDA50N50	Unit
V_DSS	Drain-Source Voltage	150	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	66 41.8	A A
I_DM	Drain Current - Pulsed (Note 1)	264	A
V_GSS	Gate-Source voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1240	mJ
I_AR	Avalanche Current (Note 1)	66	A
E_AR	Repetitive Avalanche Energy (Note 1)	35.7	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	357 2.86	W W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds	300

FDB66N15 Features

* 66A, 150V, R_DS(on) = 0.036 @V_GS = 10 V
* Low gate charge ( typical 49 nC)
* Low C_rss ( typical 78.5 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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