MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-263 D/C:2006
FDB6N60, FDB7030, FDB7030BL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: SOT-263
D/C: 2006
Description: MOSFET N-CH 30V 60A TO-263AB
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PDF/DataSheet Download
Datasheet: FDB035AN06A0
File Size: 242063 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDB7030BL
File Size: 115306 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDB7030BL
File Size: 115306 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDB7030BL |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1760pF @ 15V |
| Power - Max | 60W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 24nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDB7030BL FDB7030BL |
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage |
30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current Continuous (Note 1) Pulsed (Note 1) |
60 | A |
| 180 | |||
| PD | Total Power Dissipation @ TC = 25 Derate above 25 |
60 | W |
| 0.4 | W/ | ||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -65 to +175 |
*60 A, 30 V RDS(ON) = 9 m @ VGS = 10 V
RDS(ON) = 12 m @ VGS = 4.5 V
*Critical DC electrical parameters specified at elevated temperature
*High performance trench technology for extremely low RDS(ON)
*175 maximum junction temperature rating
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