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FDB7030BLS, FDB7030L, FDB7042L

Table of contents:
Info of FDB7030BLS
Info of FDB7030L
Info of FDB7042L

FDB7030BLS, FDB7030L, FDB7042L Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SIP-2.5 D/C:SIP-2.5

FDB7030BLS, FDB7030L, FDB7042L Datasheet download

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Part Number: FDB7030BLS

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: SIP-2.5

D/C: SIP-2.5

Description: MOSFET N-CHAN 30V TO-263AB

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FDB7030BLS General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R_DS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP7030BLS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP7030BL in parallel with a Schottky diode.

FDB7030BLS Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	56	A
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	160	A
P_D	Total Power Dissipation @ TC = 25°C Derate above 25°C	65	W
P_D	Total Power Dissipation @ TC = 25°C Derate above 25°C	0.43	W/°C
T_J, T_STG	Operating and Storage Junction Temperature Range	65 to +100	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275	°C

FDB7030BLS Features

· 56 A, 30 V. R _DS(ON) = 10.5 mW @ V_GS = 10 V
R _DS(ON) = 16.5 mW @ V_GS = 4.5 V
· Includes SyncFET Schottky body diode
· Low gate charge (15nC typical)
· High performance trench technology for extremely low R_DS(ON) and fast switching
· High power and current handling capability

FDB7030L Parameters

Technical/Catalog Information	FDB7030L
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	7 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	2440pF @ 15V
Power - Max	68W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	33nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB7030L FDB7030L FDB7030LCT ND FDB7030LCTND FDB7030LCT

FDB7030L General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power
loss, and resistance to transients are needed.

FDB7030L Maximum Ratings

Symbol	Parameter	FDP7030L	FDB7030L	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage - Continuous	±20		V
I_D	Drain Current - Continuous (Note 1) - Pulsed (Note 1)	100		A
		75
		300
P_D	Total Power Dissipation @ T_C = 25	125		W
	Derate above 25	0.83		W/
T_J ,T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

FDB7030L Features

*100 A, 30 V. R_DS(ON) = 0.007 @ V_GS=10 V
R_DS(ON) = 0.010 @ V_GS =5 V.
*Critical DC electrical parameters specified at elevated temperature.
*Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
*High density cell design for extremely low R_DS(ON) .
*175°C maximum junction temperature rating.

FDB7042L General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for"low side" synchronous rectifier operation, providing an extremely low RDS(ON) .

FDB7042L Maximum Ratings

Symbol	Parameter	FDP6030BL	FDB6030BL	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage	±20		V
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	50		A
		150
P_D	Total Power Dissipation @ T_C= 25 Derate above 25	83		W
		0.48		W/
T_J, T_STG	Operating and Storage Junction Temperature Range	-65 to +175

FDB7042L Features

*50 A, 30 V. R_DS(ON) = 9 m @ V_GS = 4.5 V
R_DS(ON) = 7.5 m @ V_GS = 10 V
*Critical DC electrical parameters specified at elevated temperature
*High performance trench technology for extremely low R_DS(ON)*175 maximum junction temperature rating

FDB7042L Typical Application

* Synchronous rectifier
* DC/DC converter

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