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This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDB8030L Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1) Pulsed (Note 1)
80
A
300
PD
Total Power Dissipation @# TC = 25 Derate above 25
187
W
1.25
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-65 to +175
TL
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
275
FDB8030L Features
* 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 V RDS(ON) = 0.0045 @ VGS = 4.5 V * Critical DC electrical parameters specified at elevated temperature * Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor * High performance trench technology for extremely low RDS(ON) * 175°C maximum junction temperature rating