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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
* rDS(ON) = 3.9m, VGS = 10V, ID= 35A * rDS(ON) = 4.4m, VGS = 4.5V, ID = 35A * High performance trench technology for extremely low rDS(ON) * Low gate charge * High power and current handling capability
FDB8870 Typical Application
* DC/DC converters
FDB8874 Parameters
Technical/Catalog Information
FDB8874
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
121A
Rds On (Max) @ Id, Vgs
4.7 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds
3130pF @ 15V
Power - Max
110W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
72nC @ 10V
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDB8874 FDB8874
FDB8874 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
FDB8874 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
Continuous (TC = 25, VGS = 10V) (Note 1)
121
A
Continuous (TC = 100, VGS = 10V) (Note 1)
107
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
21
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 2)
105
mJ
PD
Power dissipation
110
W
Derate above 25
0.73
W/°C
TJ, Tstg
Operating and Storage Temperature
-55 to 175
°C
FDB8874 Features
•rDS(ON) = 4.7mΩ , VGS = 10V, ID = 40A •rDS(ON) = 6.0mΩ , VGS = 4.5V, ID = 40A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability