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FDB8870, FDB8874, FDB8876

FDB8870, FDB8874, FDB8876 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-263  D/C:TO

FDB8870, FDB8874, FDB8876 Picture

FDB8870, FDB8874, FDB8876 Datasheet download

Five Points

Part Number: FDB8870

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-263

D/C: TO

Description: MOSFET N-CH 30V 71A D2PAK

 

 
 
 
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  • FDB8870

  • Vendor: Fairchild Qty: 750 Note: 0  Adddate: 2026-07-09
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  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
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  • FDB047N10

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 800000  Adddate: 2026-07-09
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
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About FDB8870

PDF/DataSheet Download

Datasheet: FDB8870

File Size: 124003 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FDB8874

  • D/C: 02+&   Adddate: 2026-07-09
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  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
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  • FDB047N10

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 800000  Adddate: 2026-07-09
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)

About FDB8874

PDF/DataSheet Download

Datasheet: FDB8874

File Size: 273796 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FDB047N10

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 800000  Adddate: 2026-07-09
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)
  • FDB15N50

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2026-07-09
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
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About FDB035AN06A0

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Datasheet: FDB035AN06A0

File Size: 242063 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDB8870 Parameters

Technical/Catalog InformationFDB8870
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C160A
Rds On (Max) @ Id, Vgs3.9 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 5200pF @ 15V
Power - Max160W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs132nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB8870
FDB8870

FDB8870 General Description

  This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low rDS(ON)  and fast switching speed.

FDB8870 Maximum Ratings

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 30
V
VGS
Gate to Source Voltage
±20
V
ID Drain Current
Continuous (TC = 25, VGS = 10V) (Note 1)
 
160 A
Continuous (CT = 25, VGS = 4.5V) (Note 1)
 
150 A
Continuous (Tamb = 25, VGS = 10V, with RJA  = 43/W)
 
23 A
Pulsed Figure 4 A
EAS Single Pulse Avalanche Energy (Note 1) 300 mJ
PD Power dissipation 160 W
Derate above 25 1.07 W/
TJ, TSTG
 
Operating and Storage Temperature -55 to 175

FDB8870 Features

* rDS(ON)  = 3.9m, VGS = 10V, ID= 35A
* rDS(ON) = 4.4m, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* High power and current handling capability

FDB8870 Typical Application

* DC/DC converters

FDB8874 Parameters

Technical/Catalog InformationFDB8874
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C121A
Rds On (Max) @ Id, Vgs4.7 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 3130pF @ 15V
Power - Max110W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs72nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB8874
FDB8874

FDB8874 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

FDB8874 Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
Continuous (TC = 25, VGS = 10V)   (Note 1)
        121
A
Continuous (TC = 100, VGS = 10V) (Note 1)
107
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
21
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 2)
105
mJ
PD
Power dissipation
110
W
Derate above 25
0.73
W/°C
TJ, Tstg
Operating and Storage Temperature
-55 to 175
°C

FDB8874 Features

•rDS(ON) = 4.7mΩ , VGS = 10V, ID = 40A
•rDS(ON)  = 6.0mΩ , VGS = 4.5V, ID = 40A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge
• High power and current handling capability

FDB8874 Typical Application

• DC/DC converters

FDB8876 Parameters

Technical/Catalog InformationFDB8876
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C71A
Rds On (Max) @ Id, Vgs8.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 1700pF @ 15V
Power - Max70W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs45nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB8876
FDB8876

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