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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
FDB8880 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
Continuous (TC = 25, VGS = 10V)
54
A
Continuous (TC = 100, VGS = 10V)
48
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
11
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
31
mJ
PD
Power dissipation
55
W
Derate above 25
0.37
W/°C
TJ, Tstg
Operating and Storage Temperature
-55 to 175
°C
FDB8880 Features
rDS(ON)= 14.5mΩ , VGS= 4.5V, ID =40A rDS(ON)= 11.6mΩ , VGS= 10V, ID = 40A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability
This N-Channel MOSFET has been designed specifically toimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWMcontrollers. It has been optimized for low gate charge, lowrDS(ON) and fast switching speed.
FDB8896 Maximum Ratings
Product
Product status
Eco Status
Pricing*
Package type
Leads
Packing method
Package Drawing
Package Marking Convention**
FDB8896
Full Production
RoHS Compliant
$0.84
TO-263(D2PAK)
2
TAPE REEL
TS2A
Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FDB Line 3: 8896
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples
Package marking information for product FDB8896 is available. Click here for more information .
FDB8896 Features
• rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability