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FDC6901L, FDC697P, FDC699P

Table of contents:
Info of FDC6901L
Info of FDC697P
Info of FDC699P

FDC6901L, FDC697P, FDC699P Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FDC6901L, FDC697P, FDC699P Datasheet download

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Part Number: FDC6901L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET P-CHAN 20V 7A 6SSOT

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FDC6901L Parameters

Technical/Catalog Information	FDC6901L
Vendor	Fairchild Semiconductor
Category	Integrated Circuits (ICs)
Type	High Side Switch
Number of Outputs	1
Voltage - Input	2.7 ~ 6 V
Package / Case	SuperSOT-6
Packaging	Tape & Reel (TR)
Current Limit	3A
Internal Switch(s)	Yes
Operating Temperature	-55°C ~ 150°C
Rds (On)	180 mOhm
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6901L FDC6901L

FDC6901L General Description

This device is particularly suited for compact power management. In portable electronic equipment where 2.5V to 6V input capability is needed. This load switch integrates a Slew Rate Control Driver that drives a P-Channel Power MOSFET in one tiny SuperSOT-6 package. The integrated slew rate control driver is specifically designed to control the turn on of the P-Channel MOSFET in order to limit the inrush current in battery switching applications with high capacitance loads. For turn-off, the IC pulls the MOSFET gate up quickly.

FDC6901L Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DD	Supply Voltage	0.5 to 10	V
V_IN	DC Input Voltage (Logic Inputs)	0.7 to 6	V
P_D	Power Dissipation
T_STG	Storage Junction Temperature Range	55 to +150	°C

FDC6901L Features

• Three programmable slew rates
• Reduces inrush current
• Minimizes EMI
• Normal turn-off speed
• Low-power CMOS operates over wide voltage range
• High performance trench technology for extremely low R_DS(ON)

FDC6901L Typical Application

• Load switch
• Power management

FDC697P Parameters

Technical/Catalog Information	FDC697P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	20 mOhm @ 8A, 4.5V
Input Capacitance (Ciss) @ Vds	3524pF @ 10V
Power - Max	1.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	55nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC697P FDC697P

FDC697P General Description

This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage Power Trench process. It has been optimized for battery power management applications.

FDC697P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Drain Current Continuous (Note 1a) Pulsed	-8	A
I_D	Drain Current Continuous (Note 1a) Pulsed	-40	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	2	W
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	1.5	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150

FDC697P Features

8 A, 20 V R_DS(ON) = 20 m @ V_GS= 4.5 V
R_DS(ON)= 25 m @ V_GS = 2.5 V
R_DS(ON)= 35 m @ V_GS = 1.8 V
High performance trench technology for extremely low R_DS(ON)
Fast switching speed
FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size

FDC697P Typical Application

Battery management
Load Switch
Battery protection

FDC699P Parameters

Technical/Catalog Information	FDC699P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	22 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds	2640pF @ 10V
Power - Max	1.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	38nC @ 5V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC699P FDC699P FDC699PTR ND FDC699PTRND FDC699PTR

FDC699P General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

FDC699P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	12	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	-7	A
I_D	Drain Current Continuous (Note 1a) Pulsed	-40	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	2	W
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	1.5	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150

FDC699P Features

7 A, 20 V R_DS(ON) = 22 m @ V_GS = 4.5 V
R_DS(ON) = 30 m@ V_GS = 2.5 V
High performance trench technology for extremely low R_DS(ON)
Fast switching speed
FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size

FDC699P Typical Application

Battery management
Load Switch
Battery protection

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