MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
FDD2612, FDD2670, FDD2670_NL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 200V 3.6A D-PAK
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PDF/DataSheet Download
Datasheet: FDD2612
File Size: 113628 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FDD2670
File Size: 97693 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD03-05D
File Size: 457928 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
| Technical/Catalog Information | FDD2612 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 4.9A |
| Rds On (Max) @ Id, Vgs | 720 mOhm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 234pF @ 100V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 11nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD2612 FDD2612 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 200 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current Continuous (Note 1a) Pulsed |
4.9 | A |
| 10 | |||
| PD | Power Dissipation (Note 1) (Note 1a) (Note 1b) |
42 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
| Technical/Catalog Information | FDD2670 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 3.6A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 3.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1228pF @ 100V |
| Power - Max | 1.3W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 43nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD2670 FDD2670 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 200 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current Continuous (Note 1) Drain Current Pulsed |
3.6 | A |
| 70 | |||
| PD | Maximum Power Dissipation @ TC = 25°C (Note 1) @ TA = 25°C (Note 1a) @ TA = 25°C (Note 1b) |
3.2 | W |
| 1.3 | |||
| 3.2 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
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