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FDD107AN06LA0

MOSFET 60V N-Channel PowerTrench

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SeekIC No. : 00159649 Detail

FDD107AN06LA0: MOSFET 60V N-Channel PowerTrench

FDD107AN06LA0 Data Sheet

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Part Number:
FDD107AN06LA0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10.9 A
Resistance Drain-Source RDS (on) : 0.091 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 10.9 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.091 Ohms


Features:

• rDS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A
• Qg(tot) = 4.2nC (Typ.), VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
60
±20

10.9
10
7.1
3.4
Figure 4
9
25
0.17
-55 to 175
V
V

A
A
A
A
A
mJ
W
W/°C
°C
ID
 Drain Current
Continuous (TC = 25°C, VGS = 10V)
Continuous (TC = 25°C, VGS = 5V)
Continuous (TC = 100°C, VGS = 5V)
Continuous (TA = 25°C, VGS = 5V, RJA = 52°C/W)
Pulsed
EAS
 Single Pulse Avalanche Energy (Note 2)
PD
 Power dissipation
Derate above 25°C
TJ,TSTG Operating and Storage Temperature

THERMAL CHARACTERISTICS
RJC
RJA
RJA		 Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
6.0
100
52
 °C/W
°C/W
°C/W



Parameters:

Technical/Catalog InformationFDD107AN06LA0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C10.9A
Rds On (Max) @ Id, Vgs91 mOhm @ 10.9A, 10V
Input Capacitance (Ciss) @ Vds 360pF @ 25V
Power - Max25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5.5nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD107AN06LA0
FDD107AN06LA0



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