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FDD6606, FDD6612, FDD6612A

Table of contents:
Info of FDD6606
Info of FDD6612
Info of FDD6612A

FDD6606, FDD6612, FDD6612A Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:2006+ D/C:50000

FDD6606, FDD6612, FDD6612A Datasheet download

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Part Number: FDD6606

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 2006+

D/C: 50000

Description: MOSFET N-CH 30V 9.5A D-PAK

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FDD6606 Parameters

Technical/Catalog Information	FDD6606
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	6 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	2400pF @ 15V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	31nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6606 FDD6606

FDD6606 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_{DS( ON)} and fast switching speed.

FDD6606 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (Note 3) Pulsed (Note 1a)	75	A
I_D	Drain Current Continuous (Note 3) Pulsed (Note 1a)	100	A
P_D	Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b)	71	W
		3.8
		1.6
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +175	°C

FDD6606 Features

75 A, 30 V R _DS(ON) = 6 m@ V_GS = 10 V
R _DS(ON)= 8 m @ V_GS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
low R_DS(ON)

FDD6606 Typical Application

DC/DC converter
Motor Drives

FDD6606 Connection Diagram

FDD6612A Parameters

Technical/Catalog Information	FDD6612A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	9.5A
Rds On (Max) @ Id, Vgs	20 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds	660pF @ 15V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	9.4nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6612A FDD6612A

FDD6612A General Description

FDD6612A Maximum Ratings

Symbol	Parameter		NDS9936	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 30 9.5 60 36 2.8 1.3 55 to +175	V V A W °C
ID	Continuous Drain Current @TC=25°C @TA=25°C Pulsed	(Note 3) (Note 1a) (Note 1a)
PD	Power Dissipation @TC=25°C @TA=25°C @TA=25°C	(Note 3) (Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

FDD6612A Features

· 30 A, 30 V R_DS(ON) = 20 mW @ V_GS = 10 V R_DS(ON) = 28 mW @ V_GS= 4.5 V
· Low gate charge
· Fast Switching
· High performance trench technology for extremely low RDS(ON)

FDD6612A Typical Application

· DC/DC converter
· Motor Drives

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