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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
FDD6688 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 3) Pulsed (Note 1a)
84
A
100
PD
Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b)
83
W
3.8
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +175
°C
FDD6688 Features
84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V RDS(ON) = 6 m @ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely low RDS(ON)
FDD6688 Typical Application
DC/DC converter
Motor Drives
FDD6688 Connection Diagram
FDD6688S Parameters
Technical/Catalog Information
FDD6688S
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
88A
Rds On (Max) @ Id, Vgs
5.1 mOhm @ 18.5A, 10V
Input Capacitance (Ciss) @ Vds
3290pF @ 15V
Power - Max
1.3W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
81nC @ 10V
Package / Case
DPak, SC-63, TO-252 (2 leads+tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDD6688S FDD6688S
FDD6688S General Description
The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6688S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
FDD6688S Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
30 ± 20 88 100 69 3.1 1.3 55 to +150
V
ID
Drain Current - Continuous - Pulsed
(Note 3) (Note 1a)
A
PD
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
W
TJ, TSTG
Operating and Storage Temperature Range
°C
FDD6688S Features
• 88 A, 30 V. RDS(ON) = 5.1 mΩ @ VGS = 10 V RDS(ON) = 6.3 mΩ @ VGS = 4.5 V • Low gate charge (31 nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON)