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FDD6690A, FDD6690S, FDD6692

Table of contents:
Info of FDD6690A
Info of FDD6690S
Info of FDD6692

FDD6690A, FDD6690S, FDD6692 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:07+

FDD6690A, FDD6690S, FDD6692 Datasheet download

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Part Number: FDD6690A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: TO-252

D/C: 07+

Description: MOSFET N-CHAN 30V 12A DPAK

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FDD6690A Parameters

Technical/Catalog Information	FDD6690A
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	12 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	1230pF @ 15V
Power - Max	1.5W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	18nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6690A FDD6690A FDD6690ADKR ND FDD6690ADKRND FDD6690ADKR

FDD6690A General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

FDD6690A Maximum Ratings

Symbol	Parameter		NDS9936	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 46 12 100 56 3.3 1.5 55 to +175	V V A W °C
ID	Continuous Drain Current @TC=25°C @TA=25°C Pulsed	(Note 3) (Note 1a) (Note 1a)
PD	Power Dissipation @TC=25°C @TA=25°C @TA=25°C	(Note 3) (Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

FDD6690A Features

· 46 A, 30 V R_DS(ON) = 12 mW @ V_GS = 10 V R_DS(ON) = 14 mW @ V_GS = 4.5 V
· Low gate charge
· Fast Switching Speed
· High performance trench technology for extremely low R_DS(ON)

FDD6690A Typical Application

· DC/DC converter
· Motor Drives

FDD6692 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

FDD6692 Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		30 ±16 54 162 57 3.8 1.6 -55 to +175	V V
I_D	Drain Current Continuous Pulsed	(Note 3) (Note 1a)		A
P_D	Power Dissipation for Single Operation	(Note 1) (Note 1a) (Note 1b)		W
T_J, T_STG	Operating and Storage Temperature Range			°C

FDD6692 Features

• 54 A, 30 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14.5 mΩ @ VGS = 4.5 V
• Low gate charge (18 nC typical)
• Fast switching
• High performance trench technology for extremely low RDS(ON)

FDD6692 Typical Application

• DC/DC converter
• Motor drives

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