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FDD6696, FDD6N25, FDD6N50

Table of contents:
Info of FDD6696
Info of FDD6N25
Info of FDD6N50

FDD6696, FDD6N25, FDD6N50 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FDD6696, FDD6N25, FDD6N50 Datasheet download

Five Points

Part Number: FDD6696

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CH 30V 13A D-PAK

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FDD6696 Parameters

Technical/Catalog Information	FDD6696
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	8 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	1715pF @ 15V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	24nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6696 FDD6696

FDD6696 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

FDD6696 Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		30 ± 16 50 13 100 52 3.8 1.6 55 to +175	V
I_D	Continuous Drain Current @TC=25°C @TA=25°C Pulsed	(Note 3) (Note 1a) (Note 1a)		A
P_D	Power Dissipation @TC=25°C @TA=25°C @TA=25°C	(Note 1a) (Note 1b) (Note 1c)		W
T_J, T_STG	Operating and Storage Temperature Range			°C

FDD6696 Features

· 50A, 30 V RDS(ON) = 8.0 mW @ VGS = 10 V RDS(ON) = 10.7 mW @ VGS = 4.5 V
· Low gate charge (17nC typical)
· Fast switching
· High performance trench technology for extremely low RDS(ON)

FDD6696 Typical Application

· DC/DC converter
· Motor drives

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