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FDD8882, FDD8882_NL, FDD8896

Table of contents:
Info of FDD8882
Info of FDD8882_NL
Info of FDD8896

FDD8882, FDD8882_NL, FDD8896 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:TO

FDD8882, FDD8882_NL, FDD8896 Datasheet download

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Part Number: FDD8882

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: TO

Description: MOSFET N-CH 30V 94A D-PAK

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FDD8882 Parameters

Technical/Catalog Information	FDD8882
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	11.5 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	1260pF @ 15V
Power - Max	55W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	33nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD8882 FDD8882

FDD8882 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

FDD8882 Maximum Ratings

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	30 ±20 55 50 12.6 Figure 4 41 55 0.37 -55 to 175	V V A A A A mJ W W/°C °C
ID	Drain Current Continuous (TC = 25°C, VGS = 10V) (Note 1) Continuous (TC = 25°C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 2)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC
RJA
RJA

Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area

2.73
100
52

°C/W
°C/W
°C/W

FDD8882 Features

·r_DS(ON) = 11.5mΩ, V_GS = 10V, I_D = 35A
·r_DS(ON) = 15mΩ, V_GS = 4.5V, I_D = 35A
·High performance trench technology for extremely low r_DS(ON)
·Low gate charge
·High power and current handling capability

FDD8882 Typical Application

·DC/DC converters

FDD8896 Parameters

Technical/Catalog Information	FDD8896
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	94A
Rds On (Max) @ Id, Vgs	5.7 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	2525pF @ 15V
Power - Max	80W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD8896 FDD8896

FDD8896 General Description

This N-Channel MOSFET has been designed specifically toimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWMcontrollers. It has been optimized for low gate charge, lowr_DS(ON) and fast switching speed.

FDD8896 Maximum Ratings

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDD8896	Full Production	RoHS Compliant	$1.08	TO-252(DPAK)	2	TAPE REEL		Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FDD Line 3: 8896

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDD8896 is available. Click here for more information .

FDD8896 Features

• r_DS(ON) = 5.7mW, V_GS = 10V, I_D= 35A
• r_DS(ON) = 6.8mW, V_GS = 4.5V, I_D= 35A
• High performance trench technology for extremely low r_DS(ON)
• Low gate charge
• High power and current handling capability

FDD8896 Typical Application

• DC/DC converters

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