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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
FDU8778 Maximum Ratings
VDS Drain to Source Voltage .............................................25 V VGS Gate to Source Voltage ...........................................±20 V ID Drain Current -Continuous (Package Limited) ..............35 A ID Drain Current-Continuous (Die Limited) .......................40 A ID Drain Current-Pulsed (Note 1) ...................................145 A EAS Single Pulse Avalanche Energy (Note 2) ..................24 mJ PD Power Dissipation ......................................................39 W TJ, TSTG Operating and Storage Temperature ...-55 to 175 °C
FDU8778 Features
· Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A · Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A · Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V · Low gate resistance · RoHS compliant
FDU8778 Typical Application
· DC-DC for Desktop Computers and Servers · VRM for Intermediate Bus Architecture
FDU8780 Parameters
Technical/Catalog Information
FDU8780
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25° C
35A
Rds On (Max) @ Id, Vgs
8.5 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds
1440pF @ 13V
Power - Max
50W
Packaging
Tube
Gate Charge (Qg) @ Vgs
29nC @ 10V
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDU8780 FDU8780
FDU8780 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
FDU8780 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
25
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current -Continuous (Package Limited)
35
A
-Continuous (Die Limited)
60
-Pulsed (Note 1)
224
EAS
Single Pulse Avalanche Energy (Note 2)
73
mJ
PD
Power Dissipation
50
W
TJ,TSTG
Operating and Storage Temperature
-55 to 175
°C
FDU8780 Features
`Max r DS(on) = 8.5m at VGS = 10V, ID = 35A `Max r DS(on) = 12.0m at VGS = 4.5V, ID = 35A `Low gate charge: Qg(10) = 21nC(Typ), VGS = 10V `Low gate resistance `Avalanche rated and 100% tested `RoHS Compliant
FDU8780 Typical Application
· Vcore DC-DC for Desktop Computers and Servers · VRM for Intermediate Bus Architecture
