MOSFET N-Channel PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 35 A | ||
Resistance Drain-Source RDS (on) : | 6.8 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-251 | Packaging : | Tube |
Symbol |
Parameter |
Ratings |
Units |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
60 ±20 35 35 17 Figure 4 168 80 0.53W/ -55 to 175 |
V V A A A A mJ W W/°C °C |
ID |
Drain Current Continuous (TC < 154°C, VGS = 10V) Continuous (TC < 150°C, VGS = 4.5V) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed | ||
EAS |
Single Pulse Avalanche Energy (Note 2) | ||
PD |
Power dissipation Derate above 25°C | ||
TJ,TSTG | Operating and Storage Temperature |
RJC RJA RJA |
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area |
1.88 100 52 |
°C/W °C/W °C/W |
Technical/Catalog Information | FDU068AN03L |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 35A |
Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 35A, 10V |
Input Capacitance (Ciss) @ Vds | 2525pF @ 15V |
Power - Max | 80W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 60nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDU068AN03L FDU068AN03L |