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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
FDU8796 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
25
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current -Continuous (Package Limited)
35
A
-Continuous (Die Limited)
98
-Pulsed 1
305
EAS
Single Pulse Avalanche Energy 2
91
mJ
PD
Power Dissipation
88
W
TJ,TSTG
Operating and Storage Temperature
-55 to 175
°C
FDU8796 Features
` Max rDS(on) = 5.7m at VGS = 10V, ID = 35A ` Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A ` Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V ` Low gate resistance ` Avalanche rated and 100% tested ` RoHS Compliant
FDU8796 Typical Application
· Vcore DC-DC for Desktop Computers and Servers · VRM for Intermediate Bus Architecture