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FDU8796F071, FDU8870, FDU8874

Table of contents:
Info of FDU8796F071
Info of FDU8870
Info of FDU8874

FDU8796F071, FDU8870, FDU8874 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO- D/C:TO-

FDU8796F071, FDU8870, FDU8874 Datasheet download

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Part Number: FDU8796F071

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-

D/C: TO-

Description: MOSFET N-CH 30V 116A I-PAK

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FDU8870 Parameters

Technical/Catalog Information	FDU8870
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	160A
Rds On (Max) @ Id, Vgs	3.9 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	5160pF @ 15V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	118nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU8870 FDU8870

FDU8870 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

FDU8870 Maximum Ratings

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	30 ±20 160 150 21 Figure 4 690 160 1.07 -55 to 175	V V A A A A mJ W W/°C °C
ID	Drain Current Continuous (TC = 25°C, V GS = 10V) (Note 1) Continuous (TC = 25°C, V GS = 4.5V) (Note 1) Continuous (Tamb = 25°C, VGS = 10V, with RqJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 1)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC
RJA
RJA

Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area

0.94
100
52

°C/W
°C/W
°C/W

FDU8870 Features

• r_DS(ON) = 3.9mW, V_GS= 10V, I_D = 35A
• r_DS(ON) = 4.4mW, V_GS = 4.5V, I_D = 35A
• High performance trench technology for extremely low r_DS(ON)• Low gate charge
• High power and current handling capability

FDU8874 Parameters

Technical/Catalog Information	FDU8874
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	116A
Rds On (Max) @ Id, Vgs	5.1 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	2990pF @ 15V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	72nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU8874 FDU8874

FDU8874 General Description

FDU8874 Maximum Ratings

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	30 ±20 116 103 18 Figure 4 240 110 0.73 -55 to 175	V V A A A A A mJ W W/°C °C
ID	Drain Current Continuous (TC = 25°C, V GS = 10V) (Note 1) Continuous (TC = 25°C, V GS = 4.5V) (Note 1) Continuous (Tamb = 25°C, VGS = 10V, with RqJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 2)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC
RJA
RJA

Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area

1.36
100
52

°C/W
°C/W
°C/W

FDU8874 Features

• r_DS(ON)= 5.1mW, V_GS = 10V, I_D = 35A
• r_DS(ON) = 6.4mW, V_GS = 4.5V, I_D = 35A
• High performance trench technology for extremely low r_DS(ON)
• Low gate charge
• High power and current handling capability

FDU8874 Typical Application

• DC/DC converters

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