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FGH50N6S2, FGH50N6S2D, FGH60N6S2

Table of contents:
Info of FGH50N6S2
Info of FGH50N6S2D
Info of FGH60N6S2

FGH50N6S2, FGH50N6S2D, FGH60N6S2 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:06+

FGH50N6S2, FGH50N6S2D, FGH60N6S2 Datasheet download

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Part Number: FGH50N6S2

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 06+

Description: IGBT N-CHAN 600V 75A TO-247

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FGH50N6S2 Parameters

Technical/Catalog Information	FGH50N6S2
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	75A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A
Power - Max	463W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FGH50N6S2 FGH50N6S2

FGH50N6S2 General Description

The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits IGBT formerly Developmental Type TA49342

FGH50N6S2 Maximum Ratings

Symbol	Parameter	Ratings	Units
BV_CES	Collector to Emitter Breakdown Voltage	600	V
I_C25	Collector Current Continuous, TC = 25°C	75	A
I_C110	Collector Current Continuous, TC = 110°C	60	A
I_CM	Collector Current Pulsed (Note 1)	240	A
V_GES	Gate to Emitter Voltage Continuous	±20	V
V_GEM	Gate to Emitter Voltage Pulsed	±30	V
SSOA	Switching Safe Operating Area at TJ = 150°C, Figure 2	150A at 600V	A
E_AS	Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V	480	mJ
P_D	Power Dissipation Total TC = 25°C	463	W
	Power Dissipation Derating TC > 25°C	4.7	W/°C
T_J	Operating Junction Temperature Range	-55 to 150	°C
T_STG	Storage Junction Temperature Range	-55 to 150	°C

FGH50N6S2 Features

• 100kHz Operation at 390V, 40A
• 200kHZ Operation at 390V, 25A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 70nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ
• Low Conduction Loss

FGH50N6S2D Parameters

Technical/Catalog Information	FGH50N6S2D
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	75A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A
Power - Max	463W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FGH50N6S2D FGH50N6S2D

FGH50N6S2D General Description

The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392

FGH50N6S2D Maximum Ratings

Symbol	Parameter	Ratings	Units
BV_CES	Collector to Emitter Breakdown Voltage	600	V
I_C25	Collector Current Continuous, TC = 25°C	75	A
I_C110	Collector Current Continuous, TC = 110°C	60	A
I_CM	Collector Current Pulsed (Note 1)	240	A
V_GES	Gate to Emitter Voltage Continuous	±20	V
V_GEM	Gate to Emitter Voltage Pulsed	±30	V
SSOA	Switching Safe Operating Area at TJ = 150°C, Figure 2	150A at 600V	A
E_AS	Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V	480	mJ
P_D	Power Dissipation Total TC = 25°C	463	W
	Power Dissipation Derating TC > 25°C	3.7	W/°C
T_J	Operating Junction Temperature Range	-55 to 150	°C
T_STG	Storage Junction Temperature Range	-55 to 150	°C

FGH50N6S2D Features

FGH60N6S2 General Description

The FGH60N6S2 is a Low Gate Charge, Low Plateau Volt- age SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high volt- age switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially de- signed for:
* Power Factor Correction (PFC) circuits
* Full bridge topologies
* Half bridge topologies
* Push-Pull circuits
* Uninterruptible power supplies
* Zero voltage and zero current switching circuits

FGH60N6S2 Maximum Ratings

Symbol	Parameter	Ratings	Units
BV_CES	Collector to Emitter Breakdown Voltage	600	V
I_C25	Collector Current Continuous, T_C = 25°C	75	A
I_C110	Collector Current Continuous, T_C = 110°C	75	A
I_CM	Collector Current Pulsed (Note 1)	320	A
V_GES	Gate to Emitter Voltage Continuous	±20	V
V_GEM	Gate to Emitter Voltage Pulsed	±30	V
S_SOA	Switching Safe Operating Area at T_J= 150°C, Figure 2	200A at 600V
E_AS	Pulsed Avalanche Energy, I_CE = 20A, L = 1.3mH, V_DD = 50V	700	mJ
P_D	Power Dissipation Total T_C = 25°C	625	W
	Power Dissipation Derating T_C> 25°C	5	W/°C
T_J	Operating Junction Temperature Range	-55 to 150	°C
T_STG	Storage Junction Temperature Range	-55 to 150	°C

FGH60N6S2 Features

* 100kHz Operation at 390V, 52A
* 200kHZ Operation at 390V, 31A
* 600V Switching SOA Capability
* Typical Fall Time. . . . . . 77ns at TJ = 125
* Low Gate Charge . . .140nC at V_GE = 15V
* Low Plateau Voltage . . . . . . .6.5V Typical
* UIS Rated . . . . . . . . . . . . . . . .. . . .700mJ
* Low Conduction Loss

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