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FPN430A, FPN530, FPN560A

FPN430A, FPN530, FPN560A Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:N/A  D/C:09+

FPN430A, FPN530, FPN560A Picture

FPN430A, FPN530, FPN560A Datasheet download

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Part Number: FPN430A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: TRANSISTOR NPN 60V 3A TO-226

 

 
 
 
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About FPN430A

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Datasheet: FPN430A

File Size: 49166 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About FPN530

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Datasheet: FPN530

File Size: 48953 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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Datasheet: FPN560A

File Size: 48734 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FPN430A Parameters

Technical/Catalog InformationFPN430A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)2A
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic450mV @ 100mA, 1A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-226
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FPN430A
FPN430A

FPN430A Maximum Ratings

Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 35 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 2.0 A
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
  

FPN530 Parameters

Technical/Catalog InformationFPN530
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)3A
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic300mV @ 100mA, 1A
Frequency - Transition150MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-226
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FPN530
FPN530

FPN530 Maximum Ratings

Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 50 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 3.0 A
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
 

FPN560A Parameters

Technical/Catalog InformationFPN560A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)3A
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic300mV @ 200mA, 2A
Frequency - Transition75MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-226
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FPN560A
FPN560A

FPN560A Maximum Ratings

Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 60  V
VCBO Collector-Base Voltage 80 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 3.0 A
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
 

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