MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
FQU1N60C, FQU1N60CTU, FQU1N60TU Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 600V 1A IPAK
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PDF/DataSheet Download
Datasheet: FQU1N60C
File Size: 655878 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQU10N20
File Size: 806148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction,
|
Symbol |
Parameter |
FQD1N60C/ FQU1N60C |
Units | ||
|
VDSS |
Drain-Source Voltage |
600 |
V | ||
|
ID |
Drain Current |
- Continuous (TC = 100°C) |
1 |
A | |
|
|
- Continuous (TC = 25°C) |
0.6 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
4 |
A | ||
|
VGSS |
Gate-Source Voltage |
± 30 |
V | ||
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
33 |
mJ | ||
|
IAR |
Avalanche Current (Note 1) |
1 |
A | ||
|
EAR |
Repetitive Avalanche Energy (Note 1) |
2.8 |
mJ | ||
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns | ||
|
PD TJ, TSTG |
Power Dissipation (TA = 25°C) |
2.5 |
W | ||
|
Power Dissipation (TC = 25°C) |
28 |
W/°C | |||
|
0.22 | |||||
|
Operating and |
-55 to +150 |
°C | |||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C | ||
|
Symbol |
Parameter |
FQD5N60C/FQU5N60C |
Units | ||
|
VDSS |
Drain-Source Voltage |
600 |
V | ||
|
ID |
Drain Current |
- Continuous (TC =25°C) |
1 |
A | |
|
|
- Continuous (TC = 100°C) |
0.6 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
4 |
A | ||
|
VGSS |
Gate-Source Voltage |
± 30 |
V | ||
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
33 |
mJ | ||
|
IAR |
Avalanche Current (Note 1) |
1 |
A | ||
|
EAR |
Repetitive Avalanche Energy (Note 1) |
2.8 |
mJ | ||
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns | ||
|
PD |
Power Dissipation (TA = 25°C) |
2.5 |
W | ||
|
Power Dissipation (TC = 25°C) |
28 |
W | |||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | ||
|
TL |
Maximum lead temperature for soldering purposes, |
300 |
°C | ||
| Technical/Catalog Information | FQU1N60CTU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 1A |
| Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 170pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 6.2nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQU1N60CTU FQU1N60CTU |
| Technical/Catalog Information | FQU1N60TU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 1A |
| Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 150pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 6nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQU1N60TU FQU1N60TU |
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