FQU2N50, FQU2N50B, FQU2N60 Selling Leads, Datasheet
Package Cooled:TO-251 D/C:08+
FQU2N50, FQU2N50B, FQU2N60 Datasheet download
Part Number: FQU2N50
MFG: --
Package Cooled: TO-251
D/C: 08+
FQU2N50, FQU2N50B, FQU2N60
- Table of contents:
Info of FQU2N50
Info of FQU2N50B
Info of FQU2N60
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About FQU2N50
PDF/DataSheet Download
Datasheet: FQU2N50
File Size: 744000 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQU2N50B
PDF/DataSheet Download
Datasheet: FQU2N50B
File Size: 611494 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQU2N60
PDF/DataSheet Download
Datasheet: FQU2N60
File Size: 574616 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQU2N50B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
FQU2N50B Maximum Ratings
|
Symbol |
Parameter |
FQD2N50 / FQU2N50 |
Units | |
|
VDSS |
Drain-Source Voltage |
500 |
V | |
|
ID |
Drain Current |
- Continuous (TC = 100°C) |
1.6 |
A |
|
|
- Continuous (TC = 25°C) |
1.0 |
A | |
|
IDM |
Drain Current Pulsed (Note 1) |
6.4 |
A | |
|
VGSS |
Gate-Source Voltage |
± 30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
120 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
1.6 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
3.0 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns | |
|
PD TJ, TSTG |
Power Dissipation (TA = 25°C) |
2.5 |
W | |
|
Power Dissipation (TC = 25°C) |
30 |
W | ||
|
0.38 | ||||
|
Operating and |
-55 to +150 |
°C | ||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C | |
FQU2N50B Features
• 1.6A, 500V, RDS(on) = 5.3 @VGS = 10 V
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical 4.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical 4.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU2N60 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQU2N60 Maximum Ratings
|
Symbol |
Parameter |
FQD5N60C/FQU5N60C |
Units | ||
|
VDSS |
Drain-Source Voltage |
600 |
V | ||
|
ID |
Drain Current |
- Continuous (TC =25°C) |
2.0 |
A | |
|
|
- Continuous (TC = 100°C) |
1.26 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
8.0 |
A | ||
|
VGSS |
Gate-Source Voltage |
± 30 |
V | ||
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
140 |
mJ | ||
|
IAR |
Avalanche Current (Note 1) |
2.0 |
A | ||
|
EAR |
Repetitive Avalanche Energy (Note 1) |
4.5 |
mJ | ||
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns | ||
|
PD |
Power Dissipation (TC = 25°C) |
2.5 |
W | ||
|
Power Dissipation (TC = 25°C) |
45 |
W | |||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | ||
|
TL |
Maximum lead temperature for soldering purposes, |
300 |
°C | ||
FQU2N60 Features
• 2.0A, 600V, RDS(on) = 4.7 @VGS = 10 V
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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