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FQU6N50C, FQU6N50CTU, FQU6P25

Table of contents:
Info of FQU6N50C
Info of FQU6N50CTU
Info of FQU6P25

FQU6N50C, FQU6N50CTU, FQU6P25 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FQU6N50C, FQU6N50CTU, FQU6P25 Datasheet download

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Part Number: FQU6N50C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CH 500V 4.5A IPAK

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FQU6N50C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQU6N50C Maximum Ratings

Symbol	Parameter	FQD6N50C /FQU6N50C	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	4.5	A
I_D		2.7	A
I_DM	Drain Current - Pulsed (Note 1)	18	A
V_GSS	Gate-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	300	mJ
I_AR	Avalanche Current (Note 1)	4.5	A
E_AR	Repetitive Avalanche Energy (Note 1)	6.1	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_A = 25) *	2.5	W
	Power Dissipation (T_C = 25) - Derate above 25	61	W
	Power Dissipation (T_C = 25) - Derate above 25	0.49	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds	300

FQU6N50C Features

*4.5A, 500V, R_DS(on) = 1.2 Ω @V_GS = 10 V
* Low gate charge (typical 19nC)
* Low Crss (typical 15pF)
* Fast switching
*100% avalanche tested
*Improved dv/dt capability

FQU6N50CTU Parameters

Technical/Catalog Information	FQU6N50CTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 2.25A, 10V
Input Capacitance (Ciss) @ Vds	700pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU6N50CTU FQU6N50CTU

FQU6P25 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

FQU6P25 Maximum Ratings

Symbol	Parameter	FQD6P25 / FQU6P25	Units
V_DSS	Drain-Source Voltage	-250	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	-4.7	A
I_D		-3.0	A
I_DM	Drain Current - Pulsed (Note 1)	-18.8	A
V_GSS	Gate-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	540	mJ
I_AR	Avalanche Current (Note 1)	-4.7	A
E_AR	Repetitive Avalanche Energy (Note 1)	5.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
P_D	Power Dissipation (T_A = 25) *	2.5	W
	Power Dissipation (T_C = 25) - Derate above 25	55	W
	Power Dissipation (T_C = 25) - Derate above 25	0.44	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds	300

FQU6P25 Features

• -4.7A, -250V, R_DS(on) = 1.1Ω @V_GS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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