FQU9N08, FQU9N08L, FQU9N15 Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
FQU9N08, FQU9N08L, FQU9N15 Datasheet download
Part Number: FQU9N08
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
FQU9N08, FQU9N08L, FQU9N15
- Table of contents:
Info of FQU9N08
Info of FQU9N08L
Info of FQU9N15
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About FQU9N08
PDF/DataSheet Download
Datasheet: FQU9N08
File Size: 548897 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About FQU9N08L
PDF/DataSheet Download
Datasheet: FQU9N08L
File Size: 556396 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQU9N15
PDF/DataSheet Download
Datasheet: FQU9N15
File Size: 782784 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQU9N08 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
FQU9N08 Maximum Ratings
| Symbol | Parameter | FQT7N10 |
Units |
| VDSS | Drain-Source Voltage(Note 2) | 80 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 70°C) |
7.4 | A |
| 4.68 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 29.6 | A |
| VGSS | Gate-Source Voltage | ± 25 | V |
| EAS | Single Pulsed Avalanche Energy | 55 | mJ |
| IAR | Avalanche Current (Note 1) | 7.4 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 2.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.5 | V/ns |
| PD | Power Dissipation (TC = 25°C) | 2.5 | W |
| Power Dissipation (TC = 25°C) - Derate above 25°C | 25 | W | |
| 0.2 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
FQU9N08 Features
• 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU9N08L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
FQU9N08L Maximum Ratings
| Symbol | Parameter | FQD9N08L /FQU9N08L | Units |
| VDSS | Drain-Source Voltage | 80 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
7.4 | A |
| 4.68 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 29.6 | A |
| VGSS | Gate-Source Voltage | ±20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 55 | mJ |
| IAR | Avalanche Current (Note 1) | 7.4 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 2.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.5 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
25 | W | |
| 0.2 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
FQU9N08L Features
• 7.4A, 80V, RDS(on) = 0.21Ω @VGS = 10 V
• Low gate charge ( typical 4.7 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 maximum junction temperature rating
• Low level gate drive requirements allowing
direct operation from logic drives
• Low gate charge ( typical 4.7 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 maximum junction temperature rating
• Low level gate drive requirements allowing
direct operation from logic drives
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