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FRAF1001G, FRAF1002G, FRAF1003G

FRAF1001G, FRAF1002G, FRAF1003G Selling Leads, Datasheet

MFG:TSC  Package Cooled:TO-  D/C:05/06

FRAF1001G, FRAF1002G, FRAF1003G Picture

FRAF1001G, FRAF1002G, FRAF1003G Datasheet download

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Part Number: FRAF1001G

 

MFG: TSC

Package Cooled: TO-

D/C: 05/06

 

 

 
 
 
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About FRAF1001G

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Datasheet: FRAF1001G

File Size: 84128 KB

Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]

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Datasheet: FRAF1002G

File Size: 84128 KB

Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]

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About FRAF1003G

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Datasheet: FRAF1003G

File Size: 84128 KB

Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]

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FRAF1001G Maximum Ratings

Rating at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number Symbol FRAF
1001G
FRAF
1002G
FRAF
1003G
FRAF
1004G
FRAF
1005G
FRAF
1006G
FRAF
1007G
Units
Maximum Recurrent Peak Reverse Voltage VRRM 50


35


50
100


70


100
200


140


200
400


280


400
600


420


600
800


560


800
1000


700


1000

V

Maximum RMS Voltage VRMS
Maximum DC Blocking Voltage VDC
Maximum Average Forward Rectified Current
@TC = 55
I(AV)

8.0

A

Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM

150

A

Maximum Instantaneous Forward Voltage
@ 10A
VF

1.3

uA

Maximum DC Reverse Current @ TC=25
at Rated DC Blocking Voltage@ TC=125
IR

5.0
100

uA

Maximum Reverse Recovery Time ( Note 2) Trr

150

250

500

ns

Typical Junction Capacitance ( Note 1 )TJ=25 Cj

100

pF

Typical Thermal Resistance (Note 3) RJC

5.0

/W

Operating and Storage Temperature Range TJ
TSTG
-65 to +150

FRAF1001G Features

 Low forward voltage drop
 High current capability
 High reliability
 High surge current capability

FRAF1002G Maximum Ratings

Rating at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number Symbol FRAF
1001G
FRAF
1002G
FRAF
1003G
FRAF
1004G
FRAF
1005G
FRAF
1006G
FRAF
1007G
Units
Maximum Recurrent Peak Reverse Voltage VRRM 50


35


50
100


70


100
200


140


200
400


280


400
600


420


600
800


560


800
1000


700


1000

V

Maximum RMS Voltage VRMS
Maximum DC Blocking Voltage VDC
Maximum Average Forward Rectified Current
@TC = 55
I(AV)

8.0

A

Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM

150

A

Maximum Instantaneous Forward Voltage
@ 10A
VF

1.3

uA

Maximum DC Reverse Current @ TC=25
at Rated DC Blocking Voltage@ TC=125
IR

5.0
100

uA

Maximum Reverse Recovery Time ( Note 2) Trr

150

250

500

ns

Typical Junction Capacitance ( Note 1 )TJ=25 Cj

100

pF

Typical Thermal Resistance (Note 3) RJC

5.0

/W

Operating and Storage Temperature Range TJ
TSTG
-65 to +150

FRAF1002G Features

 Low forward voltage drop
 High current capability
 High reliability
 High surge current capability

FRAF1003G Maximum Ratings

Rating at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number Symbol FRAF
1001G
FRAF
1002G
FRAF
1003G
FRAF
1004G
FRAF
1005G
FRAF
1006G
FRAF
1007G
Units
Maximum Recurrent Peak Reverse Voltage VRRM 50


35


50
100


70


100
200


140


200
400


280


400
600


420


600
800


560


800
1000


700


1000

V

Maximum RMS Voltage VRMS
Maximum DC Blocking Voltage VDC
Maximum Average Forward Rectified Current
@TC = 55
I(AV)

8.0

A

Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM

150

A

Maximum Instantaneous Forward Voltage
@ 10A
VF

1.3

uA

Maximum DC Reverse Current @ TC=25
at Rated DC Blocking Voltage@ TC=125
IR

5.0
100

uA

Maximum Reverse Recovery Time ( Note 2) Trr

150

250

500

ns

Typical Junction Capacitance ( Note 1 )TJ=25 Cj

100

pF

Typical Thermal Resistance (Note 3) RJC

5.0

/W

Operating and Storage Temperature Range TJ
TSTG
-65 to +150

FRAF1003G Features

 Low forward voltage drop
 High current capability
 High reliability
 High surge current capability

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