FRS230D, FRS230H, FRS230R Selling Leads, Datasheet
MFG:NIEC Package Cooled:TO- D/C:TO-
FRS230D, FRS230H, FRS230R Datasheet download
Part Number: FRS230D
MFG: NIEC
Package Cooled: TO-
D/C: TO-
MFG:NIEC Package Cooled:TO- D/C:TO-
FRS230D, FRS230H, FRS230R Datasheet download
MFG: NIEC
Package Cooled: TO-
D/C: TO-
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: FRS230D
File Size: 50092 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FRS230H
File Size: 50092 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FRS230R
File Size: 50092 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
The Intersil Corporation has designed a series of SECOND GENERATION hardenedpower MOSFETs of both N and P channel enhancement types with ratingsrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. It is specially designed and processed toexhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toheavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above. eliability screening is available as either non TX (commercial), TX equivalent of IL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of IL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired eviations from the data sheet.
FRS230D, R, H | UNITS | ||
Drain-Source Voltage | VDS |
200 |
V |
Drain-Gate Voltage (RGS = 20k). | VDGR |
200 |
V |
Continuous Drain Current TC = +25 TC = +100 |
ID ID |
7 4 |
A A |
Pulsed Drain Current | IDM |
21 |
A |
Gate-Source Voltage | VGS |
±20 |
V |
Maximum Power Dissipation TC = +25 TC = +100 |
PT PT |
50 20 |
W W |
Derated Above +25 |
0.40 |
W/ | |
Inductive Current, Clamped, L = 100H, (See Test Figure) | ILM |
21 |
A |
Continuous Source Current (Body Diode) | IS |
7 |
A |
Pulsed Source Current (Body Diode) | ISM |
21 |
A |
Operating And Storage Temperature | TJC, TSTG |
-55 to +150 |
|
Lead Temperature (During Soldering) | |||
Distance > 0.063 in. (1.6mm) From Case, 10s Max | TL |
300 |
The Intersil Corporation has designed a series of SECOND GENERATION hardenedpower MOSFETs of both N and P channel enhancement types with ratingsrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. It is specially designed and processed toexhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toheavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above. eliability screening is available as either non TX (commercial), TX equivalent of IL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of IL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired eviations from the data sheet.
FRS230D, R, H | UNITS | ||
Drain-Source Voltage | VDS |
200 |
V |
Drain-Gate Voltage (RGS = 20k). | VDGR |
200 |
V |
Continuous Drain Current TC = +25 TC = +100 |
ID ID |
7 4 |
A A |
Pulsed Drain Current | IDM |
21 |
A |
Gate-Source Voltage | VGS |
±20 |
V |
Maximum Power Dissipation TC = +25 TC = +100 |
PT PT |
50 20 |
W W |
Derated Above +25 |
0.40 |
W/ | |
Inductive Current, Clamped, L = 100H, (See Test Figure) | ILM |
21 |
A |
Continuous Source Current (Body Diode) | IS |
7 |
A |
Pulsed Source Current (Body Diode) | ISM |
21 |
A |
Operating And Storage Temperature | TJC, TSTG |
-55 to +150 |
|
Lead Temperature (During Soldering) | |||
Distance > 0.063 in. (1.6mm) From Case, 10s Max | TL |
300 |
The Intersil Corporation has designed a series of SECOND GENERATION hardenedpower MOSFETs of both N and P channel enhancement types with ratingsrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. It is specially designed and processed toexhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toheavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above. eliability screening is available as either non TX (commercial), TX equivalent of IL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of IL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired eviations from the data sheet.
FRS230D, R, H | UNITS | ||
Drain-Source Voltage | VDS |
200 |
V |
Drain-Gate Voltage (RGS = 20k). | VDGR |
200 |
V |
Continuous Drain Current TC = +25 TC = +100 |
ID ID |
7 4 |
A A |
Pulsed Drain Current | IDM |
21 |
A |
Gate-Source Voltage | VGS |
±20 |
V |
Maximum Power Dissipation TC = +25 TC = +100 |
PT PT |
50 20 |
W W |
Derated Above +25 |
0.40 |
W/ | |
Inductive Current, Clamped, L = 100H, (See Test Figure) | ILM |
21 |
A |
Continuous Source Current (Body Diode) | IS |
7 |
A |
Pulsed Source Current (Body Diode) | ISM |
21 |
A |
Operating And Storage Temperature | TJC, TSTG |
-55 to +150 |
|
Lead Temperature (During Soldering) | |||
Distance > 0.063 in. (1.6mm) From Case, 10s Max | TL |
300 |