FRS140H

The Intersil Corporation FRS140H has designed a series of SECOND GENERATION hardenedpower MOSFETs of both N and P channel enhancement types with ratingsfrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness FRS140H is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm² for 500V product to 1E14n/cm² for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.

This MOSFET FRS140H is an enhancement-mode silicon-gate power field effect transistorof the vertical DMOS (VDMOS) structure. FRS140H is specially designed and processedo exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toheavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.

FRS140H may be supplied as a die or in various packages other than shownabove. Reliability screening is available as either non TX (commercial), TXequivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalentof MIL-S-19500. Contact the Intersil High-Reliability Marketing group for ny desired deviations from the data sheet.