FRS244D, FRS244H, FRS244R Selling Leads, Datasheet
MFG:NIEC Package Cooled:TO- D/C:TO-
FRS244D, FRS244H, FRS244R Datasheet download
Part Number: FRS244D
MFG: NIEC
Package Cooled: TO-
D/C: TO-
FRS244D, FRS244H, FRS244R
- Table of contents:
Info of FRS244D
Info of FRS244H
Info of FRS244R
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About FRS244D
PDF/DataSheet Download
Datasheet: FRS244D
File Size: 50073 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About FRS244H
PDF/DataSheet Download
Datasheet: FRS244H
File Size: 50073 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About FRS244R
PDF/DataSheet Download
Datasheet: FRS244R
File Size: 50073 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
FRS244D General Description
The Intersil Corporation has designed a series of SECOND GENERATION hardenedower MOSFETs of both N and P channel enhancement types with ratingsfrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. It is specially designed and processed toexhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toeavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desireddeviations from the data sheet.
FRS244D Maximum Ratings
| FRS244D, R, H | UNITS | ||
| Drain-Source Voltage | VDS |
250 |
V |
| Drain-Gate Voltage (RGS = 20k). | VDGR |
250 |
V |
| Continuous Drain Current TC = +25 TC = +100 |
ID ID |
9 6 |
A A |
| Pulsed Drain Current | IDM |
27 |
A |
| Gate-Source Voltage | VGS |
±20 |
V |
| Maximum Power Dissipation TC = +25 TC = +100 |
PT PT |
75 30 |
W W |
| Derated Above +25 |
0.60 |
W/ | |
| Inductive Current, Clamped, L = 100H, (See Test Figure) | ILM |
27 |
A |
| Continuous Source Current (Body Diode) | IS |
9 |
A |
| Pulsed Source Current (Body Diode) | ISM |
27 |
A |
| Operating And Storage Temperature | TJC, TSTG |
-55 to +150 |
|
| Lead Temperature (During Soldering) | |||
| Distance > 0.063 in. (1.6mm) From Case, 10s Max | TL |
300 |
FRS244D Features
• 9A, 250V, RDS(on) = 0.415
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
FRS244H General Description
The Intersil Corporation has designed a series of SECOND GENERATION hardenedower MOSFETs of both N and P channel enhancement types with ratingsfrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. It is specially designed and processed toexhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toeavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desireddeviations from the data sheet.
FRS244H Maximum Ratings
| FRS244D, R, H | UNITS | ||
| Drain-Source Voltage | VDS |
250 |
V |
| Drain-Gate Voltage (RGS = 20k). | VDGR |
250 |
V |
| Continuous Drain Current TC = +25 TC = +100 |
ID ID |
9 6 |
A A |
| Pulsed Drain Current | IDM |
27 |
A |
| Gate-Source Voltage | VGS |
±20 |
V |
| Maximum Power Dissipation TC = +25 TC = +100 |
PT PT |
75 30 |
W W |
| Derated Above +25 |
0.60 |
W/ | |
| Inductive Current, Clamped, L = 100H, (See Test Figure) | ILM |
27 |
A |
| Continuous Source Current (Body Diode) | IS |
9 |
A |
| Pulsed Source Current (Body Diode) | ISM |
27 |
A |
| Operating And Storage Temperature | TJC, TSTG |
-55 to +150 |
|
| Lead Temperature (During Soldering) | |||
| Distance > 0.063 in. (1.6mm) From Case, 10s Max | TL |
300 |
FRS244H Features
• 9A, 250V, RDS(on) = 0.415
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
FRS244R General Description
The Intersil Corporation has designed a series of SECOND GENERATION hardenedower MOSFETs of both N and P channel enhancement types with ratingsfrom 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dosehardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardnessranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Doserate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. It is specially designed and processed toexhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toeavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desireddeviations from the data sheet.
FRS244R Maximum Ratings
| FRS244D, R, H | UNITS | ||
| Drain-Source Voltage | VDS |
250 |
V |
| Drain-Gate Voltage (RGS = 20k). | VDGR |
250 |
V |
| Continuous Drain Current TC = +25 TC = +100 |
ID ID |
9 6 |
A A |
| Pulsed Drain Current | IDM |
27 |
A |
| Gate-Source Voltage | VGS |
±20 |
V |
| Maximum Power Dissipation TC = +25 TC = +100 |
PT PT |
75 30 |
W W |
| Derated Above +25 |
0.60 |
W/ | |
| Inductive Current, Clamped, L = 100H, (See Test Figure) | ILM |
27 |
A |
| Continuous Source Current (Body Diode) | IS |
9 |
A |
| Pulsed Source Current (Body Diode) | ISM |
27 |
A |
| Operating And Storage Temperature | TJC, TSTG |
-55 to +150 |
|
| Lead Temperature (During Soldering) | |||
| Distance > 0.063 in. (1.6mm) From Case, 10s Max | TL |
300 |
FRS244R Features
• 9A, 250V, RDS(on) = 0.415
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
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