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FRS440R, FRS4805, FRS505C

Table of contents:
Info of FRS440R
Info of FRS4805
Info of FRS505C

FRS440R, FRS4805, FRS505C Selling Leads, Datasheet

MFG:NIEC Package Cooled:TO- D/C:TO-

FRS440R, FRS4805, FRS505C Datasheet download

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Part Number: FRS440R

MFG: NIEC

Package Cooled: TO-

D/C: TO-

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FRS440R General Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened ower MOSFETs of both N and P channel enhancement types with ratings rom 100V t 500V, 1A to 60A, and on resistance as low as 25mW. Total dose ardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness anging from 1E13n/cm² for 500V product to 1E14n/cm² for 100V product. Dose ate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of he vertical DMOS (VDMOS) structure. It is specially designed and processed to xhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) xposures. Design and processing efforts are also directed to enhance survival to eavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired eviations from the data sheet.

FRS440R Maximum Ratings

		FRS440D, R, H	UNITS
Drain-Source Voltage	VDS	500	V
Drain-Gate Voltage (RGS = 20k).	VDGR	500	V
Continuous Drain Current TC = +25 TC = +100	ID ID	5 3	A A
Pulsed Drain Current	IDM	15	A
Gate-Source Voltage	VGS	±20	V
Maximum Power Dissipation TC = +25 TC = +100	PT PT	75 30	W W
Derated Above +25		0.60	W/
Inductive Current, Clamped, L = 100H, (See Test Figure)	ILM	15	A
Continuous Source Current (Body Diode)	IS	2	A
Pulsed Source Current (Body Diode)	ISM	15	A
Operating And Storage Temperature	TJC, TSTG	-55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max	TL	300

FRS440R Features

• 5A, 500V, RDS(on) = 1.420W
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
   - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
   - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
   - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 12.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm²
   - Usable to 3E13 Neutrons/cm²

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