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FRS9130H, FRS9130R, FRS9140D

Table of contents:
Info of FRS9130H
Info of FRS9130R
Info of FRS9140D

FRS9130H, FRS9130R, FRS9140D Selling Leads, Datasheet

MFG:NIEC Package Cooled:TO- D/C:TO-

FRS9130H, FRS9130R, FRS9140D Datasheet download

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Part Number: FRS9130H

MFG: NIEC

Package Cooled: TO-

D/C: TO-

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FRS9130H General Description

The Intersil has designed a series of SECOND GENERATION hardened powerMOSFETs of both N and P channel enhancement types with ratings from 100V to500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness isoffered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging fromE13n/cm² for 500V product to 1E14n/cm² for 100V product. Dose rate hardness(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with currentlimiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. It is specially designed and processed toexhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toheavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desireddeviations from the data sheet.

FRS9130H Maximum Ratings

		FRS9130D, R, H	UNITS
Drain-Source Voltage	VDS	-100	V
Drain-Gate Voltage (RGS = 20k).	VDGR	-100	V
Continuous Drain Current TC = +25 TC = +100	ID ID	6 4	A A
Pulsed Drain Current	IDM	18	A
Gate-Source Voltage	VGS	±20	V
Maximum Power Dissipation TC = +25 TC = +100	PT PT	50 20	W W
Derated Above +25		0.4.	W/
Inductive Current, Clamped, L = 100H, (See Test Figure)	ILM	18	A
Continuous Source Current (Body Diode)	IS	6	A
Pulsed Source Current (Body Diode)	ISM	18	A
Operating And Storage Temperature	TJC, TSTG	-55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max	TL	300

FRS9130H Features

• 6A, -100V, RDS(on) = 0.565W
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
   - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
   - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
   - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 1.50nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm²
   - Usable to 3E14 Neutrons/cm²

FRS9130R General Description

FRS9130R Maximum Ratings

		FRS9130D, R, H	UNITS
Drain-Source Voltage	VDS	-100	V
Drain-Gate Voltage (RGS = 20k).	VDGR	-100	V
Continuous Drain Current TC = +25 TC = +100	ID ID	6 4	A A
Pulsed Drain Current	IDM	18	A
Gate-Source Voltage	VGS	±20	V
Maximum Power Dissipation TC = +25 TC = +100	PT PT	50 20	W W
Derated Above +25		0.4.	W/
Inductive Current, Clamped, L = 100H, (See Test Figure)	ILM	18	A
Continuous Source Current (Body Diode)	IS	6	A
Pulsed Source Current (Body Diode)	ISM	18	A
Operating And Storage Temperature	TJC, TSTG	-55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max	TL	300

FRS9130R Features

FRS9140D General Description

Intersil has designed a series of SECOND GENERATION hardened power MOSFETsof both N and P channel enhancement types with ratings from 100V to 500V,1A to 60A, and on resistance as low as 25mW. Total dose hardness is offered at100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm²for 500V product to 1E14n/cm² for 100V product. Dose rate hardness (GAMMADOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor ofthe vertical DMOS (VDMOS) structure. It is specially designed and processed toexhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)exposures. Design and processing efforts are also directed to enhance survival toheavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.Reliability screening is available as either non TX (commercial), TX equivalent ofMIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent ofMIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group forany desired deviations from the data sheet.

FRS9140D Maximum Ratings

		FRS140D, R, H	UNITS
Drain-Source Voltage	VDS	-100	V
Drain-Gate Voltage (RGS = 20k).	VDGR	-100	V
Continuous Drain Current TC = +25 TC = +100	ID ID	11 7	A A
Pulsed Drain Current	IDM	33	A
Gate-Source Voltage	VGS	±20	V
Maximum Power Dissipation TC = +25 TC = +100	PT PT	75 30	W W
Derated Above +25		0.60	W/
Inductive Current, Clamped, L = 100H, (See Test Figure)	ILM	33	A
Continuous Source Current (Body Diode)	IS	11	A
Pulsed Source Current (Body Diode)	ISM	36	A
Operating And Storage Temperature	TJC, TSTG	-55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max	TL	300

FRS9140D Features

• 11A, -100V, RDS(on) = 0.315W
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre   -Rad Specifications to 100KRAD(Si)
   - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
   - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
   - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 3.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm²
   - Usable to 3E14 Neutrons/cm²

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