FSDM0365RN DIP, FSDM0365RNB-, FSDM0465RB Selling Leads, Datasheet
MFG:FAIRCHILD D/C:07+Y
FSDM0365RN DIP, FSDM0365RNB-, FSDM0465RB Datasheet download

Part Number: FSDM0365RN DIP
MFG: FAIRCHILD
Package Cooled:
D/C: 07+Y
MFG:FAIRCHILD D/C:07+Y
FSDM0365RN DIP, FSDM0365RNB-, FSDM0465RB Datasheet download

MFG: FAIRCHILD
Package Cooled:
D/C: 07+Y
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PDF/DataSheet Download
Datasheet: FSD1000
File Size: 384366 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FSD1000
File Size: 384366 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FSDM0465RB
File Size: 256780 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
The FSDM0465RB is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high voltage power switching regulator which combines a rugged avalanche, SenseFET with a current mode PWM control block. The PWM controller includes integrated fixed frequency oscillator, under voltage lockout, leading edge blanking (LEB), optimized gate driver, internal soft start, temperature compensated precise current sources for a loop compensation and self protection circuitry. Compared with a discrete MOSFET and PWM controller solution, the PWM/FSDMRB can reduce total cost, component count, size and weigh, while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform well suited for cost-effective designs of flyback converters.
| Parameter | Symbol | Value | Unit |
| Drain-source Voltage | VDSS | 650 | V |
| Vstr Max Voltage | VSTR | 650 | V |
| Pulsed Drain Current (Tc=25°C)(1) | IDM | 9.6 | A |
| Continuous Drain Current (Tc=25°C) (2) | ID | 2.2 | A (rms) |
| Continuous Drain Current (Tc=100°C) (2) | 1.4 | A (rms) | |
| Continuous Drain Current*(TDL=25°C) (3) | ID* | 4 | A (rms) |
| Single Pulsed Avalanche Energy (4) | EAS | - | mJ |
| Supply Voltage | VCC | 20 | V |
| Input Voltage Range | VFB | -0.3 to VCC | V |
| Total Power Dissipation (Tc=25°C) (2) | PD | 33 | W |
| Operating Junction Temperature | TJ | Internally limited | °C |
| Operating Ambient Temperature | TA | -25 to +85 | °C |
| Storage Temperature Range | TSTG | -55 to +150 | °C |
| ESD Capability, HBM Model (All pins except Vstr and Vfb) |
- | 2.0 (GND-Vstr/Vfb=1.5kV) |
kV |
| ESD Capability, Machine Model (All pins except Vstr and Vfb) |
- | 300 (GND-Vstr/Vfb=225V) |
V |

