FSF10D60, FSF150D, FSF150R Selling Leads, Datasheet
MFG:NIEC Package Cooled:TO-220F D/C:08+
FSF10D60, FSF150D, FSF150R Datasheet download
Part Number: FSF10D60
MFG: NIEC
Package Cooled: TO-220F
D/C: 08+
FSF10D60, FSF150D, FSF150R
- Table of contents:
Info of FSF10D60
Info of FSF150D
Info of FSF150R
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About FSF055D
PDF/DataSheet Download
Datasheet: FSF055D
File Size: 47769 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About FSF150D
PDF/DataSheet Download
Datasheet: FSF150D
File Size: 46406 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About FSF150R
PDF/DataSheet Download
Datasheet: FSF150R
File Size: 46406 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
FSF150D General Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
FSF150D Maximum Ratings
| FSF150D, FSF150R | UNITS | ||
| Drain-Source Voltage | VDS |
100 |
V |
| Drain-Gate Voltage (RGS = 20k). | VDGR |
100 |
V |
| Continuous Drain Current TC = 25 TC = 100 |
ID ID |
25 (Note 1) 20 |
A A |
| Pulsed Drain Current | IDM |
75 |
A |
| Gate-Source Voltage | VGS |
±20 |
V |
| Maximum Power Dissipation TC = 25 TC = 100 |
PT PT |
125 50 |
W W |
| Linear Derating Factor |
1.00 |
W/ | |
| Single Pulsed Avalanche Current,L = 100H, (See Test Figure) | IAS |
75 |
A |
| Continuous Source Current (Body Diode) | IS |
25 (Note 1) |
A |
| Pulsed Source Current (Body Diode) | ISM |
75 |
A |
| Operating And Storage Temperature | TJ, TSTG |
-55 to +150 |
|
| Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max |
TL |
300 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Current is limited by the package capability.
FSF150D Features
• 25A, 100V, rDS(ON) = 0.070
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 7.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 7.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
FSF150R General Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
FSF150R Maximum Ratings
| FSF150D, FSF150R | UNITS | ||
| Drain-Source Voltage | VDS |
100 |
V |
| Drain-Gate Voltage (RGS = 20k). | VDGR |
100 |
V |
| Continuous Drain Current TC = 25 TC = 100 |
ID ID |
25 (Note 1) 20 |
A A |
| Pulsed Drain Current | IDM |
75 |
A |
| Gate-Source Voltage | VGS |
±20 |
V |
| Maximum Power Dissipation TC = 25 TC = 100 |
PT PT |
125 50 |
W W |
| Linear Derating Factor |
1.00 |
W/ | |
| Single Pulsed Avalanche Current,L = 100H, (See Test Figure) | IAS |
75 |
A |
| Continuous Source Current (Body Diode) | IS |
25 (Note 1) |
A |
| Pulsed Source Current (Body Diode) | ISM |
75 |
A |
| Operating And Storage Temperature | TJ, TSTG |
-55 to +150 |
|
| Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max |
TL |
300 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Current is limited by the package capability.
FSF150R Features
• 25A, 100V, rDS(ON) = 0.070
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 7.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 7.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
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